PTB20180 Datasheet, PDF (1/2 Pages) Ericsson – 2.5 Watts, 1.8-2.0 GHz Cellular Radio RF Power Transistor

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PTB 20180
2.5 Watts, 1.8–2.0 GHz
Cellular Radio RF Power Transistor
Description
The 20180 is a class AB, NPN, common emitter RF power transistor
intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 2.5 watts
minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability. 100% lot
traceability is standard.
Typical Output Power vs. Input Power
1.0
0.8
0.6
0.4
0.2
0.0
0.00
V_CC = 26 V
I_CQ = 20 mA
f = 2 GHz
0.02
0.04
0.06
0.08
0.10
Input Power (Watts)
• 2.5 Watts, 1.8–2.0 GHz
• Class AB Characteristics
• Gold Metallization
• Silicon Nitride Passivated
• Surface Mountable
• Available in Tape and Reel
20180 _{LOT CODE}
Package 20227
Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage (collector open)
Collector Current (continuous)
Total Device Dissipation at Tflange = 25°C
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70°C)
Symbol
V_CER
V_CBO
V_EBO
I_C
P_D
T_STG
R_θJC
Value
50
50
4.0
0.5
10.0
0.057
–40 to +150
17.5
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C/W
1
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