PTB20175 Datasheet, PDF (1/4 Pages) Ericsson – 55 Watts, 1.9-2.0 GHz Cellular Radio RF Power Transistor

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PTB 20175
55 Watts, 1.9–2.0 GHz
Cellular Radio RF Power Transistor
Description
The 20175 is a class AB, NPN common emitter RF power transistor
intended for 26 Vdc operation from 1.9 to 2.0 GHz. It is rated at 55
watts minimum output power and may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability. 100% lot
traceability is standard.
• 55 Watts, 1.9–2.0 GHz
• Class AB Characteristics
• 40% Collector Efficiency at 55 Watts
• Gold Metallization
• Silicon Nitride Passivated
Typical Output Power vs. Input Power
70
60
50
40
30
V_CC = 26 V
I_CQ = 0.150 A
20
f = 2 GHz
10
2
4
6
8
10
12
14
Input Power (Watts)
Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage (collector open)
Collector Current (continuous)
Total Device Dissipation at Tflange = 25° C
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70° C)
20175 _{LOT CODE}
Package 20223
Symbol
V_CER
V_CES
V_EBO
I_C
P_D
Tstg
R_θJC
Value
55
55
4
8
233
1.33
–40 to +150
.75
Unit
Vdc
Vdc
Vdc
Adc
W
W/°C
°C
°C/W
1
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