PTB20170 Datasheet, PDF (1/5 Pages) Ericsson – 30 Watts, 1.8-2.0 GHz Cellular Radio RF Power Transistor

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PTB 20170
30 Watts, 1.8–2.0 GHz
Cellular Radio RF Power Transistor
Description
The 20170 is a class AB, NPN, common emitter RF power transistor
intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 30 watts
minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability. 100% lot
traceability is standard.
• 30 Watts, 1.8–2.0 GHz
• Class AB Characteristics
• Gold Metallization
• Silicon Nitride Passivated
Typical Output Power vs. Input Power
40
35
30
25
20
15
V_CC = 26 V
10
I_CQ = 100 mA
5
f = 2.0 GHz
0
0
1
2
3
4
5
6
7
Input Power (Watts)
Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage (collector open)
Collector Current (continuous)
Total Device Dissipation at Tflange = 25°C
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70°C)
20170 _{LOT CODE}
Package 20209
Symbol
V_CER
V_CES
V_EBO
I_C
P_D
T_STG
R_θJC
Value
55
55
4.0
6.7
123
0.7
–40 to +150
1.43
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C/W
1
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