PTB20167 Datasheet, PDF (1/3 Pages) Ericsson – 60 Watts, 850-960 MHz RF Power Transistor

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PTB 20167
60 Watts, 850–960 MHz
RF Power Transistor
Description
The 20167 is an NPN, common base RF power transistor intended
for 24 Vdc operation from 850 to 960 MHz. Rated at 60 watts minimum
output power, it is specifically designed for class C power amplifier
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability. 100% lot
traceability is standard.
• 24 Volt, 905 MHz Common Base Characteristics
- Output Power = 60 W
- Power Gain = 7.0 dB Min
- Efficiency = 60% Min
• Double Input/Output Matched for Wideband
Performance
• Gold Metallization
• Silicon Nitride Passivated
Typical Output Power vs. Input Power
70
65
60
55
50
45
40
V_CC = 24 V
35
f = 905 MHz
30
6
7
8
9
10
11
12
Input Power (Watts)
20167 _{LOT CODE}
Package 20200
Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage (collector open)
Collector Current (continuous)
Total Device Dissipation at Tflange = 25°C
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70°C)
Symbol
V_CEO
V_CBO
V_EBO
I_C
P_D
T_STG
R_θJC
Value
30
55
4.0
10
175
1
–40 to +150
1
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C/W
1
9/28/98