PTB20166 Datasheet, PDF (1/3 Pages) Ericsson – 23 Watts, 675-925 MHz Common Base RF Power Transistor

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PTB 20166
23 Watts, 675–925 MHz
Common Base RF Power Transistor
Description
The 20166 is an NPN, common base RF power transistor intended
for 24–30 Vdc class C operation from 675 to 925 MHz. Rated at 23
watts minimum output power, it may be used for both CW and pulsed
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability. 100% lot
traceability is standard.
Typical Output Power vs. Input Power
30
25
20
15
10
5
0
0.0
V_CC = 28 V
f = 925 MHz
0.5
1.0
1.5
2.0
2.5
3.0
Input Power (Watts)
Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage (collector open)
Collector Current (continuous)
Total Device Dissipation at Tflange = 25°C
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70°C)
• Specified at 28 Volt, 925 MHz
• Class C Characteristics
• 55% Min Collector Efficiency at 23 Watts
• Gold Metallization
• Silicon Nitride Passivated
20166 _{LOT CODE}
Package 20209
Symbol
V_CER
V_CBO
V_EBO
I_C
P_D
T_STG
R_θJC
Value
50
50
4
4
48
0.27
–40 to +150
3.6
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C/W
1
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