PTB20157 Datasheet, PDF (1/3 Pages) Ericsson – 20 Watts, 1.35-1.85 GHz RF Power Transistor

e
PTB 20157
20 Watts, 1.35–1.85 GHz
RF Power Transistor
Description
The 20157 is an NPN common base RF power transistor intended
for 22–26 Vdc class C operation from 1.35 to 1.85 GHz. Rated at 20
watts minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability. 100% lot
traceability is standard.
Typical Output Power vs. Input Power
30
25
20
15
10
5
0
0
V_CC = 22 V
f = 1.85 GHz
1
2
3
4
5
6
7
Input Power (Watts)
• 20 Watts, 1.35–1.85 GHz
• Class C Characteristics
• 40% Min Collector Efficiency at 20 Watts
• Gold Metallization
• Silicon Nitride Passivated
20157 _{LOT CODE}
Package 20209
Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage (collector open)
Collector Current (continuous)
Total Device Dissipation at Tflange = 25°C
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70°C)
Symbol
V_CER
V_CBO
V_EBO
I_C
P_D
T_STG
R_θJC
Value
50
50
4
6
75
0.43
–40 to +150
2.33
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C/W
1
9/28/98