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PTB20147 Datasheet, PDF (1/2 Pages) Ericsson – 2.5 Watts, 1.8-2.0 GHz Cellular Radio RF Power Transistor | |||
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PTB 20147
2.5 Watts, 1.8â2.0 GHz
Cellular Radio RF Power Transistor
Description
The 20147 is a class AB, NPN, common emitter RF power transistor
intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 2.5 watts
minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability. 100% lot
traceability is standard.
Typical Output Power vs. Input Power
6
5
VCC = 26 V
ICQ = 40 mA
4
f = 2.0 GHz
3
2
1
0
0
0.1
0.2
0.3
0.4
0.5
Input Power (Watts)
Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage (collector open)
Collector Current (continuous)
Total Device Dissipation at Tflange = 25°C
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70°C)
1
9/28/98
 2.5 Watts, 1.8â2.0 GHz
 Class AB Characteristics
 35% Collector Efficiency at 4 Watts
 Tested to solderability standards:
- IEC-68-2-54
- ANSI/J Std-002-A
 Gold Metallization
 Silicon Nitride Passivated
 Surface Mountable
 Available in Tape and Reel
20147 LOT CODE
Package 20208
Symbol
VCER
VCBO
VEBO
IC
PD
TSTG
RθJC
Value
50
50
4.0
1.0
10
0.057
â40 to +150
17.5
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C/W
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