PTB20145 Datasheet, PDF (1/3 Pages) Ericsson – 9 Watts, 915-960 MHz Cellular Radio RF Power Transistor

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PTB 20145
9 Watts, 915–960 MHz
Cellular Radio RF Power Transistor
Description
The 20145 is a class AB, NPN, common emitter RF power transistor
intended for 25 Vdc operation from 915 to 960 MHz. Rated at 9 watts
minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability. 100% lot
traceability is standard.
Typical Output Power vs. Input Power
12
10
8
6
4
2
0
0.00
V_CC = 25V
I_CQ = 50 mA
f = 960 MHz
0.25
0.50
0.75
1.00
1.25
Input Power (Watts)
• 9 Watts, 915–960 MHz
• Class AB Characteristics
• 50% Min Collector Efficiency at 9 Watts
• Tested to solderability standards:
- IEC-68-2-54
- ANSI/J Std-002-A
• Gold Metallization
• Silicon Nitride Passivated
• Surface Mountable
• Available in Tape and Reel
20145 _{LOT CODE}
Package 20208
Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage (collector open)
Collector Current (continuous)
Total Device Dissipation at Tflange = 25°C
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70°C)
9/28/98
Symbol
Value
Unit
V_CER
55
Vdc
V_CBO
60
Vdc
V_EBO
4.0
Vdc
I_C
2.6
Adc
P_D
33
Watts
0.19
W/°C
T_STG
R_θJC
–40 to +150
5.3
°C
°C/W
1