PTB20141 Datasheet, PDF (1/2 Pages) Ericsson – 18 Watts, 1.465-1.513 GHz Cellular Radio RF Power Transistor

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PTB 20141
18 Watts, 1.465–1.513 GHz
Cellular Radio RF Power Transistor
Description
The 20141 is a class AB, NPN, common emitter RF power transistor
intended for 23 Vdc operation from 1.465 to 1.513 GHz. Rated at 18
watts minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability. 100% lot
traceability is standard.
Typical Output Power vs. Input Power
30
V_CC = 23 V
25
I_CQ = 50 mA
20 ^{f = 1.501 GHz}
15
10
5
0
0
1
2
3
4
5
Input Power (Watts)
Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage (collector open)
Collector Current (continuous)
Total Device Dissipation at Tflange = 25°C
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70°C)
• 18 Watts, 1.465–1.513 GHz
• Class AB Characteristics
• 45% Min Collector Efficiency at 9 Watts
• Gold Metallization
• Silicon Nitride Passivated
20141 _{LOT CODE}
Package 20201
Symbol
V_CER
V_CBO
V_EBO
I_C
P_D
T_STG
R_θJC
Value
50
50
4.0
2.0
51.5
0.29
–40 to +150
3.5
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C/W
1
9/28/98