PTB20134 Datasheet, PDF (1/2 Pages) Ericsson – 30 Watts, 860-900 MHz Cellular Radio RF Power Transistor

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PTB 20134
30 Watts, 860–900 MHz
Cellular Radio RF Power Transistor
Description
The 20134 is a class AB, NPN, common emitter RF power transistor
intended for 25 Vdc operation from 860 to 900 MHz. Rated at 30
watts minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability. 100% lot
traceability is standard.
Typical Output Power vs. Input Power
50
V_CC = 25 V
40
I_CQ = 100 mA
f = 900 MHz
30
20
10
0
0
1
2
3
4
5
Input Power (Watts)
• 30 Watts, 860–900 MHz
• Class AB Characteristics
• 50% Min Collector Efficiency at 30 Watts
• Gold Metallization
• Silicon Nitride Passivated
20134 _{LOT CODE}
Package 20201
Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage (collector open)
Collector Current (continuous)
Total Device Dissipation at Tflange = 25°C
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70°C)
Symbol
V_CER
V_CBO
V_EBO
I_C
P_D
T_STG
R_θJC
Value
40
50
4.0
8.0
80
0.45
–40 to +150
2.2
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C/W
1
9/28/98