PTB20105 Datasheet, PDF (1/3 Pages) Ericsson – 20 Watts, 925-960 MHz Cellular Radio RF Power Transistor

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PTB 20105
20 Watts, 925–960 MHz
Cellular Radio RF Power Transistor
Description
The 20105 is a class AB, NPN, common emitter RF power transistor
intended for 25 Vdc operation from 925 to 960 MHz. Rated at 20
watts minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability. 100% lot
traceability is standard.
Output Power vs. Input Power
25
20
15
10
V_CC = 25 V
5
I_CQ = 0.100 A
f = 960 MHz
0
0
1
2
3
4
Input Power (Watts)
Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage (collector open)
Collector Current (continuous)
Total Device Dissipation at Tflange = 25°C
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70°C)
• Class AB Characteristics
• Performance at 960 MHz, 25 V_CC
- Output Power = 20 W
- Efficiency = 50% Min
• Gold Metallization
• Silicon Nitride Passivated
20105 _{LOT CODE}
Package 20201
Symbol
V_CER
V_CBO
V_EBO
I_C
P_D
T_STG
R_θJC
Value
40
50
4.0
5.0
70
0.4
–40 to +150
2.5
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C/W
1
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