PTB20097 Datasheet, PDF (1/3 Pages) Ericsson – 40 Watts, 915-960 MHz Cellular Radio RF Power Transistor

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PTB 20097
40 Watts, 915–960 MHz
Cellular Radio RF Power Transistor
Description
The 20097 is a class AB, NPN, common emitter RF power transistor
intended for 25 Vdc operation across the 915 to 960 MHz frequency
band. Rated at 40 watts minimum output power, it may be used for
both CW and PEP applications. Ion implantation, nitride surface
passivation and gold metallization are used to ensure excellent device
reliability. 100% lot traceability is standard.
• 40 Watts, 915–960 MHz
• Class AB Characteristics
• 50% Collector Efficiency at 40 Watts
• Gold Metallization
• Silicon Nitride Passivated
Typical Output Power vs. Input Power
60
50
40
30
20
V_CC = 25 V
I_CQ = 200 mA
10
f = 960 MHz
0
0
2
4
6
8
10
Input Power (Watts)
Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage (collector open)
Collector Current (continuous)
Total Device Dissipation at Tflange = 25°C
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70°C)
20097 _{LOT CODE}
Package 20200
Symbol
V_CER
V_CBO
V_EBO
I_C
P_D
T_STG
R_θJC
Value
40
50
4.0
10
175
1.0
–40 to +150
1.0
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C/W
1
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