PTB20082 Datasheet, PDF (1/4 Pages) Ericsson – 15 Watts, 1.8-2.0 GHz Cellular Radio RF Power Transistor

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PTB 20082
15 Watts, 1.8–2.0 GHz
Cellular Radio RF Power Transistor
Description
The 20082 is a class AB, NPN, common emitter RF power transistor
intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 15 watts
output power, it may be used for both CW and PEP applications. Ion
implantation, nitride surface passivation and gold metallization ensure
excellent device reliability. 100% lot traceability is standard.
• 10 Watts Linear Power
• Output Power at 1 dB Compressed = 15 W
• Class AB Characteristics
• 30% Collector Efficiency at 7.5 Watts
• Gold Metallization
• Silicon Nitride Passivated
Typical Output Power vs. Input Power
20
16
12
8
V_CC = 26 V
I_CQ = 70 mA
4
f = 2.0 GHz
0
0
1
2
3
4
Input Power (Watts)
20082 _{LOT CODE}
Package 20209
Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage (collector open)
Collector Current (continuous)
Total Device Dissipation at Tflange = 25°C
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70°C)
Symbol
V_CER
V_CBO
V_EBO
I_C
P_D
T_STG
R_θJC
Value
50
50
4.0
1.4
52
0.29
–40 to +150
3.4
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C/W
1
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