PTB20080 Datasheet, PDF (1/3 Pages) Ericsson – 25 Watts, 1.6-1.7 GHz RF Power Transistor

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PTB 20080
25 Watts, 1.6–1.7 GHz
RF Power Transistor
Description
ThPTB 20080 is a class A/AB, NPN, silicon bipolar junction, internally-
matched RF power transistor intended for 26 Vdc operation from 1.6
to 1.7 GHz. It is rated at 25 Watts minimum output power for PEP
applications. Ion implantation, nitride surface passivation and gold
metallization ensure excellent device reliability. 100% lot traceability
is standard.
Typical Output Power & Efficiency vs. Input Power
40
80
• 25 Watts, 1.6–1.7 GHz
• Class AB Characteristics
• 40% Collector Efficiency at 25 Watts
• Gold Metallization
• Silicon Nitride Passivated
30
60
20
40
V_CC = 26 V
10
I_CQ = 125 mA ²⁰
f = 1.65 GHz
0
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
Input Power (Watts)
Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage (collector open)
Collector Current (continuous)
Total Device Dissipation at Tflange = 25° C
Above 25° C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70°C)
20_{EX0XX 80}
Package 20209
Symbol
V_CER
V_CBO
V_EBO
I_C
P_D
T_STG
R_θJC
Value
50
50
4.0
3.4
123
0.7
150
1.43
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C/W
1
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