PTB20079 Datasheet, PDF (1/3 Pages) Ericsson – 10 Watts, 1.6-1.7 GHz INMARSAT RF Power Transistor

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PTB 20079
10 Watts, 1.6–1.7 GHz
INMARSAT RF Power Transistor
Description
The 20079 is a class A/AB, NPN, silicon bipolar junction, internally-
matched, common emitter RF Power transistor intended for 26 Vdc
operation across 1.6 to 1.7 GHz frequency band. It is rated at 10
Watts minimum output power for PEP applications. Ion implantation,
nitride surface passivation and gold metallization ensure excellent
device reliability. 100% lot traceability is standard.
• 10 Watts, 1.6–1.7 GHz
• Class A/AB Characteristics
• 38% Collector Efficiency at 10 Watts
• Gold Metallization
• Silicon Nitride Passivated
Typical Output Power vs. Input Power
16
+24V
14
+26V
12
+22V
10
8
6
4
f = 1.65 GHz
2
I_CQ = 100 mA
0
0.00
0.50
1.00
1.50
2.00
Input Power (Watts)
Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage (collector open)
Collector Current (continuous)
Total Device Dissipation at Tflange = 25° C
Above 25° C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70° C)
20079 _{LOT CODE}
Package 20209
Symbol
V_CER
V_CBO
V_EBO
I_C
P_D
T_STG
R_θJC
Value
50
50
4.0
1.4
52
0.29
–40 to +150
3.4
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C/W
1
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