PTB20078 Datasheet, PDF (1/3 Pages) Ericsson – 2.5 Watts, 1525-1660 MHz INMARSAT RF Power Transistor

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PTB 20078
2.5 Watts, 1525–1660 MHz
INMARSAT RF Power Transistor
Description
The 20078 is a class AB, NPN, common emitter RF power transistor
intended for 26 Vdc operation from 1525 to 1660 MHz. Rated at 2.5
watts minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability. 100% lot
traceability is standard.
• 2.5 Watts, 1525–1660 MHz
• Class AB Characteristics
• Gold Metallization
• Silicon Nitride Passivated
• Surface Mountable
• Available in Tape and Reel
Typical Output Power vs. Input Power
4.5
4.0
3.5
3.0
2.5
2.0
1.5
V_CC = 26 V
1.0
I_CQ = 20 mA
0.5
f = 1.66 GHz
0.0
0.0
0.1
0.2
0.3
0.4
0.5
0.6
Input Power (Watts)
Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage (collector open)
Collector Current (continuous)
Total Device Dissipation at Tflange = 25°C
Above 25°C derate by
Storage Temperature
Thermal Resistance (Tflange = 70°C)
20078 _{LOT CODE}
Package 20227
Symbol
V_CER
V_CBO
V_EBO
I_C
P_D
Tstg
R_θJC
Value
50
50
4.0
0.5
10.0
0.057
150
17.5
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C/W
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