PTB20053 Datasheet, PDF (1/3 Pages) Ericsson – 60 Watts, 860-900 MHz Cellular Radio RF Power Transistor

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PTB 20053
60 Watts, 860–900 MHz
Cellular Radio RF Power Transistor
Description
The 20053 is a class AB, NPN, common emitter RF power transistor
intended for 25 Vdc operation from 860 to 900 MHz. Rated at 60
watts minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability. 100% lot
traceability is standard.
• 60 Watts, 860–900 MHz
• Class AB Characteristics
• 50% Collector Efficiency at 60 Watts
• Gold Metallization
• Silicon Nitride Passivated
Gain vs. Frequency
(as measured in a broadband circuit)
13
12
V_CC = 25 V
I_CQ = 200 mA
11
Pout = 60 W
10
9
8
7
850 860 870 880 890 900 910
Frequency (MHz)
Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage (collector open)
Collector Current (continuous)
Total Device Dissipation at Tflange = 25°C
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70°C)
20053 _{LOT CODE}
Package 20200
Symbol
V_CER
V_CBO
V_EBO
I_C
P_D
T_STG
R_θJC
Value
40
65
4.0
8.0
145
0.83
–40 to +150
1.2
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C/W
1
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