PTB20051 Datasheet, PDF (1/2 Pages) Ericsson – 6 Watts, 1.465-1.513 GHz Cellular Radio RF Power Transistor

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PTB 20051
6 Watts, 1.465–1.513 GHz
Cellular Radio RF Power Transistor
Description
The 20051 is a class AB, NPN, common emitter RF power transistor
intended for 26 Vdc operation from 1.465 to 1.513 GHz. Rated at 6
watts minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability. 100% lot
traceability is standard.
• 6 Watts, 1.465–1.513 GHz
• Class AB Characteristics
• 35% Collector Efficiency at 4 Watts
• Gold Metallization
• Silicon Nitride Passivated
Typical Output Power vs. Input Power
9.0
7.5
6.0
4.5
3.0
V_CC = 26 V
I_CQ = 40 mA
1.5
f = 1.501 GHz
0.0
0
0.5
1
1.5
2
Input Power (Watts)
20051 _{LOT CODE}
Package 20201
Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage (collector open)
Collector Current (continuous)
Total Device Dissipation at Tflange = 25°C
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70°C)
Symbol
V_CER
V_CBO
V_EBO
I_C
P_D
T_STG
R_θJC
Value
50
50
4.0
0.7
28
0.16
–40 to +150
6.2
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C/W
1
9/28/98