PTB20030 Datasheet, PDF (1/3 Pages) Ericsson – 15 Watts, 420-470 MHz RF Power Transistor

e
PTB 20030
15 Watts, 420–470 MHz
RF Power Transistor
Description
The 20030 is a class AB, NPN, common emitter RF power transistor
intended for 24 Vdc operation across the 420 to 470 MHz frequency
band. Rated at 15 watts minimum output power, it may be used for
both CW and PEP applications. Ion implantation, nitride surface
passivation and gold metallization are used to ensure excellent device
reliability. 100% lot traceability is standard.
• 15 Watts, 420–470 MHz
• Class AB Characteristics
• 50% Collector Efficiency at 15 Watts
• Gold Metallization
• Silicon Nitride Passivated
Typical Output Power vs. Input Power
30
25
20
15
10
5
0
0.0
V_CC = 24 V
I_CQ = 200 mA
f = 470 MHz
0.5
1.0
1.5
2.0
Input Power (Watts)
20030 _{LOT CODE}
Package 20201
Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage (collector open)
Collector Current (continuous)
Total Device Dissipation at Tflange = 25°C
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70°C)
Symbol
V_CER
V_CBO
V_EBO
I_C
P_D
T_STG
R_θJC
Value
48
50
4.0
6.0
63
0.30
–40 to +150
2.8
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C/W
1
9/28/98