PTB20017 Datasheet, PDF (1/3 Pages) Ericsson – 150 Watts, 860-900 MHz Cellular Radio RF Power Transistor

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PTB 20017
150 Watts, 860–900 MHz
Cellular Radio RF Power Transistor
Description
The 20017 is a class AB, NPN, common emitter RF power transistor
intended for 25 Vdc operation across the 860 to 900 MHz cellular
radio frequency band. Rated at 150 watts minimum output power, it
may be used for both CW and PEP applications. Ion implantation,
nitride surface passivation and gold metallization are used to ensure
excellent device reliability. 100% lot traceability is standard.
• 150 Watts, 860–900 MHz
• Class AB Characteristics
• 50% Collector Efficiency at 150 Watts
• Gold Metallization
• Silicon Nitride Passivated
Typical Output Power vs. Input Power
240
200
160
120
80
40
0
0
V_CC = 25 V
I_CQ = 200 mA (per side)
f = 900 MHz
7
14
21
28
35
Input Power (Watts)
Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage (collector open)
Collector Current (continuous)
Total Device Dissipation at Tflange = 25°C
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70°C)
20017 _{LOT CODE}
Package 20224
Symbol
V_CER
V_CBO
V_EBO
I_C
P_D
T_STG
R_θJC
Value
40
60
4.0
25
330
1.89
–40 to +150
0.53
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C/W
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