PTB20008 Datasheet, PDF (1/3 Pages) Ericsson – 10 Watts, 935-960 MHz Cellular Radio RF Power Transistor

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PTB 20008
10 Watts, 935–960 MHz
Cellular Radio RF Power Transistor
Description
The 20008 is a class AB, NPN, common emitter RF power transistor
intended for 24 Vdc operation from 935 to 960 MHz. Rated at 10
watts minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization ensure excellent device reliability. 100% lot traceability
is standard.
• 10 Watts, 935–960 MHz
• Class AB Characteristics
• 50% Collector Efficiency at 10 Watts
• Gold Metallization
• Silicon Nitride Passivated
Typical Output Power vs. Input Power
15.0
12.5 ^{VCC = 24 V}
I_CQ = 100 mA
10.0 _{f = 960 MHz}
7.5
5.0
2.5
0.0
0.2
0.4
0.6
0.8
1.0
1.2
Input Power (Watts)
Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage (collector open)
Collector Current (continuous)
Total Device Dissipation at Tflange = 25°C
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70°C)
20008 _{LOT CODE}
Package 20201
Symbol
V_CER
V_CBO
V_EBO
I_C
P_D
T_STG
R_θJC
Value
40
50
4.0
6.7
65
0.4
–40 to +150
2.7
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C/W
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