TG5032CBN Datasheet, PDF (1/2 Pages) Epson Company – ULTRA HIGH STABILITY

Crystal oscillator
TCXO / VC-TCXO
ULTRA HIGH STABILITY
TG5032CBN
TG5032SBN
Product Number (please contact us)
TG5032CBN : X1G004571xxxx00
TG5032SBN : X1G004581xxxx00
Frequency range : 10 MHz to 40 MHz
Supply voltage
: 3.3 V
Frequency / temperature characteristics
: ±0.28×10^-6 Max. (for Stratum3)
: ±1.0×10^-6 Max. (for Microwave BTS)
Frequency aging : ±3.0×10^-6 Max./20years(for Stratum3)
: ±5.0×10^-6 Max./10years(for Microwave BTS)
External dimensions : 5.0 × 3.2 × 1.45 mm (10 pins)
Applications
: Network system, Stratum3, Microwave BTS
Features
: Ultra high stability
Actual size
Specifications (characteristics)
Item
Symbol
TG5032CBN (CMOS)
VC-TCXO
TCXO
TG5032SBN (Clipped sine wave)
VC-TCXO
TCXO
Conditions / Remarks
Output frequency range
f0
10 MHz to 40 MHz
10, 12.8, 19.2, 20, 25.6, 26MHz
Standard frequency
Supply voltage
Storage temperature
V_CC
T_stg
3.3 V± 0.165V (Supply voltage range :2.7 V to 5.5 V)
-40 ºC to +90 ºC
Storage as single product
Operating temperature
Frequency tolerance
T_use
f_tol
-40 ºC to +85 ºC
±1.0 × 10^-6Max.
After reflow, +25 ºC
Frequency/temperature characteristics
Frequency/load coefficient
Frequency/voltage coefficient
f0-TC
f0-Load
f0-VCC
±0.28 × 10^-6 Max.(for Stratum3)
±1.0 × 10^-6 Max.(for Microwave BTS)
±0.1 ×10^-6 Max.
±0.1 ×10^-6 Max.
±0.5 ×10^-6 Max.
-40 ºC to +85 ºC
Load ±10 %
VCC=3.3 V ± 0.165 V
+25 °C, First year
Frequency aging
f_age
±3.0 ×10^-6 Max. (for Stratum3)
+25 °C , 20 years
±5.0 ×10^-6 Max. (for Microwave BTS)
+25 °C , 10 years
Current consumption
ICC
5.0 mA Max.
6.0 mA Max.
5.0 mA Max.
10 MHz≦ f0 ≦26 MHz
26 MHz＜f0 ≦40 MHz
Input resistance
Frequency control range
Rin
100 kΩ Min.
―
f_cont
±5 ×10^-6 to
±10 ×10^-6
―
100 kΩ Min.
±5 ×10^-6 to
±10 ×10^-6
―
VC- GND (DC)
―
VC=1.5 V ± 1.0 V
Frequency change polarity
― Positive polarity
―
Positive polarity
―
Symmetry
SYM
45 % to 55 %
―
GND level (DC cut)
Output voltage
VOH
90 % VCC Min.
―
VOL
10 % VCC Max.
―
Output level
VPP
―
0.8 V Min.
Peak to Peak
Output load condition
Load
15 pF Max.
10 kΩ//10 pF
Input voltage
VIH
VIL
2.4 V Min.
0.6 V Max.
OE terminal(Enable voltage)
OE terminal(Disable voltage)
* Note : Please contact us for requirements not listed in this specification.
Product Name
(Standard form)
TG5032 C BN 19.200000MHz C B G H A A
①②
③
④⑤ ⑥⑦ ⑧⑨
①Model ②Output (C: CMOS, S: Clipped sine wave) ③Frequency ④Supply voltage (C: 3.3 V Typ.)
⑤Frequency/temperature characteristics (B: 0.28  10^-6 Max., J: 1.0  10^-6 Max.)
⑥Operating temperature (G: -40 C to +85 C) ⑦OE function (H: Active High)
⑧VC function(A: VC-TCXO, N: Non) ⑨Internal identification code (“A” is default)
External dimensions
(Unit :mm)
Footprint (Recommended) (Unit :mm)
E19.200C
○01AEYK
Pin map
Pin
1
2
3
4
5
6
7
8
9
10
Connection
VC-TCXO
TCXO
VC
N.C.
N.C.
OE
GND
N.C.
OUT
N.C.
N.C.
VCC
N.C.
OE pin = "H" or "open": Specified frequency output.
OE pin = "L" : Output is high impedance.
To maintain stable operation, provide a 0.01 µF to 0.1 μF
by-pass capacitor at a location as near as possible to the
power source terminal of the crystal product (between
V_CC - GND).