SG531 Datasheet, PDF (1/3 Pages) Epson Company – Crystal Oscillators(HCMOS/TTL DUAL IN LINE PLASTIC FULL SIZE SG-51/ HALF SIZE SG-531)

Crystal Oscillators - Seiko Epson
HCMOS/TTL DUAL IN LINE PLASTIC FULL SIZE SG-51/ HALF SIZE SG-531
SG-51/Half Size SG531
SG531
SG51
Features
• Frequency range 1.025MHz-125.0MHz
• Cylindrical type AT cut crystal quartz built in,
thereby assuring high reliability
• Suitable for automatic insertion
• Use of CMOS IC enables reduction of current
consumption
• Output load 10LSTTL/30-50pF
• Available with output enable and standby
functions - SG51P and SG531P series
• Pin compatible with 8 pin and 14 pin metal can
versions
• Packaged in plastic DIP package saves board
space
• Extensive stock holding on SG531 series
Specifications
Item
Symbol
Specifications
SG-51P/531P SG-51PTJ/531 PTJ SG-51PH/531PH
Remarks
Output frequency range
fo
Power source Max. supply voltage
voltage
Operating voltage
Temperature
Storage temp.
range
Operating temp.
Soldering condition (lead part)
Frequency stability
Vpp -GND
VDD
TSTG
TOPR
TSOL
∆f/fo
Current consumption
lop
Duty
C-MOS level
Tw/T
TTL level
Output voltage
VOH
(IOH)
VOL
(IOL )
Output load
C-MOS
CL
condition (fan out) TTL
N
Output enable/disable input voltage
VIH
VIL
Output disable current
IOE
Output
C-MOS level
rise time
TTL level
TTLH
Output
C-MOS level
fall time
TTL level
TTHL
Oscillation start up time
tOSC
1.0250MHz to
26.0001MHZ to 66.6667MHZ
26.0000MHz
-0.3V to +7.0V
5.0V±0.5V
-55°C to +125°C
-55°C to +100°C
-10°C to +70°C
Under 260°C within 10 sec.
B: ±50ppm
C: ±100ppm
23mA MAX.
35mA MAX.
40% to 60%
–
40% to 60%
45% to 55%
–
VDD - 0.4V MIN.
2.4V MIN.
VDD -0.4V MIN.
-400µA
-4µA
0.4V MAX.
16mA
8mA
4mA
50pF MAX.
–
50pF MAX.
10TTL MAX.
5TTL MAX.
–
2.0V MIN
3.5V MIN.
2.0V MIN.
0.8V
1.5V MAX.
0.8V MAX.
12mA MAX.
28mA MAX.
20mA MAX.
8nsec.MAX
5nsec. MAX
7nsec. MAX.
8nsec.MAX
5nsec. MAX
7nsec. MAX.
4msec. MAX.
10msec. MAX.
Aging
fa
Shock resistance
S.R.
±5ppm/year MAX.
±20ppm MAX.
Don’t heat up the package more than 150°C
-10°C to +70°C
B Type is possible up to 55.0MHz
No load condition
1.2VDD level
1.4V level
IIH = 1µ A MAX. (OE=VDD)
IIL =-100µ A MIN. (OE=GND), PTJ: -500µA
OE=GN
C-MOS load : 20% to 80% VDD
TTL load : 0.4V to 2.4V
C-MOS load : 80% to 20% VDD
TTL load : 2.4V to 0.4V
More than for 1ms until VDD =0V to 4.5V
Time at 4.5V to be 0sec.
Ta = 25°C, VDD =5V, first year
Drop Test of three times on hard board from
75cm height or excitation test with 3000G x
0.3ms x 1/2 sine wave in 3 directions.
Notes
• Unless otherwise stated, characteristics (specifications) shown in the above table are based on the rated
operating temperature and voltage condition.
• External by-pass capacitor is recommended.
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