SG-51 Datasheet, PDF (1/2 Pages) Epson Company – FULL & HALF-SIZE DIP HIGH-FREQUENCY CRYSTAL OSCILLATOR

Crystal oscillator
FULL-SIZE DIP HIGH-FREQUENCY CRYSTAL OSCILLATOR
SG-51 series
HALF-SIZE DIP HIGH-FREQUENCY CRYSTAL OSCILLATOR
SG-531 series
Product number (please refer to page 1)
Q325 10xxxx xxx 00
Q325 31xxxx xxx 00
• Pin compatible with full-size metal can. (SG-51 series)
• Pin compatible with half-size metal can. (SG-531 series)
• Cylindrical AT-cut crystal unit builtin, thus assuring high reliability.
• Use of CMOS IC enables reduction of current consumption.
Actual size
SG-51
SG-531
Specifications (characteristics)
Item
Symbol
SG-51P/531P
Specifications
SG-51PTJ/531PTJ
SG-51PH/531PH
Remarks
Output frequency range
f0
Power source
voltage
Temperature
range
Max. supply voltage
Operating voltage
Storage temperature
Operating temperature
VDD-GND
VDD
TSTG
TOPR
Frequency stability
∆f/f0
Current consumption
Iop
Output disable current
IOE
Duty
CMOS level
tw/t
TTL level
VOH
Output voltage
VOL
Output load
CMOS
CL
condition (fan out)
TTL
N
VIH
Output enable/disable input voltage _VIL
Output
CMOS level
tTLH
rise time
TTL level
Output
fall time
CMOS level
tTHL
TTL level
Oscillation start up time
tOSC
Aging
fa
1.0250 MHz to
26.0000 MHz
26.0001 MHz to 66.6667 MHz
-0.3 V to +7.0 V
-0.5 V to +7.0 V
5.0 V±0.5 V
-55 °C to +125 °C
-20 °C to +70 °C (-40 °C to +85 °C)
B: ± 50 x 10^-6
23 mA Max.
C: ±100 x 10^-6
35 mA Max.
12 mA Max.
28 mA Max.
20 mA Max.
40 % to 60 %
—
40 % to 60 %
45 % to 55 %
—
VDD-0.4 V Min.
2.4 V Min.
VDD -0.4 V Min.
50 pF Max.
0.4 V Max.
—
50 pF Max.
10 TTL Max.
5 TTL Max.
—
2.0 V Min.
3.5 V Min.
2.0 V Min.
0.8 V Max.
1.5 V Max.
0.8 V Max.
8 ns Max.
—
5 ns Max.
7 ns Max.
—
8 ns Max.
—
5 ns Max.
7 ns Max.
—
4 ms Max.
10 ms Max.
±5 x 10^-6/year Max.
Shock resistance
S.R.
±20 x 10^-6 Max.
Refer to page 31. "Frequency range"
Stored as bare product after unpacking
Refer to page 31. "Frequency range"
B type is possible up to 55.0 MHz
No load condition
OE=GND
1/2 VDD level
1.4 V level
IOH = -400 µA (P,PTJ) /-4 mA (PH)
IOL = 16 mA (P) / 8 mA (PTJ) / 4mA (PH)
CL≤15 pF
IIH=1 µA Max. (OE=VDD)
IIL= -100 µA Min. (OE=GND), PTJ: IIL = -500 µA Min. (OE=GND)
CMOS load: 20 %→80 % VDD
TTL load: 0.4 V→2.4 V
CMOS load: 80 %→20 % VDD
TTL load: 2.4 V→0.4 V
More than for 1 ms until VDD =0 V→4.5 V
Time at 4.5 V to be 0 s
Ta=+25 °C, VDD =5 V,first year
Three drops on a hard board from 750 mm or
excitation test with 29400 m/s² x 0.3 ms x 1/2
sine wave in 3 directions
Note: • Unless otherwise stated, characteristics (specifications) shown in the above table are based on the rated operating temperature and voltage condition.
• External by-pass capacitor is recommended.
External dimensions
(Unit: mm)
SG-51 series
19.8 Max.
#14
#8
E SG51P 9353B
16.0000MHz C
#1
#7
NO. Pin terminal
1 OE
7 GND
8 OUT
14 VDD
7.62
SG-531 series
13.7 Max.
#8
#5
SG531PTJC
E60.09030503MB
#1
#4
NO. Pin terminal
1 _{OE or ST}
4 GND
5 OUT
8 VDD
7.62
0.51
15.24
0.25
90° to
105°
0.51
7.62
Note.
OE Pin (P, PTJ, PH, PTW, PHW, PCW)
OE pin - "H" or "open" : Specified frequency output.
OE pin - "L" : Output is high impedance.
ST pin (STW, SHW, SCW)
ST pin - "H" or "open" : Specified frequency output.
ST pin - "L" : Output is low level (weak pull - down), oscillation stops.
45
0.25
90° to
105°