EPC-1300-3.0-1 Datasheet, PDF (2/2 Pages) EPIGAP optoelectronic GmbH – Photodiode-Chip

Photodiode-Chip
EPC-1300-3.0-1
16.05.2008
rev. 07
T ypical O p tica l R esp onsivity
1,0
0,8
0,6
0,4
0,2
0,0
400
600
800 1000 1200 1400 1600 1800
W avele ngth [nm ]
D ark C u rrent vs. A m b ient T em p erature
100
T = 0 .74 % /K
K
10
1
20
40
60
80
100
120
A m b ie n t T e m p e ra tu re [°C ]
S ho rt-C ircuit C u rrent vs. A m b ien t T em p erature [T ]
C
1 ,0 4
1 ,0 2
1 ,0 0
0 ,9 8
0 ,9 6
0 ,9 4
0 ,9 2
0 ,9 0
T (I ) = -0.37 % /K
C SH
0
20
40
60
80
100
120
140
A m b ie n t T e m p e ra tu re [°C ]
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each application by the customers themselves.
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: [phone], Fax : [phone]
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