EPD-880-5-0.9 Datasheet, PDF (1/2 Pages) EPIGAP optoelectronic GmbH – Photodiode

Photodiode
Prototype
Wavelength
Infrared
Type
Integrated filter
Anode
1,5
9,15
1
5,75 _{- 0,3}
36,5 ^{± 1,0}
0,6 _{- 0,2}
Ø5
04.05.2007
Technology
AlGaAs/GaAs
EPD-880-5-0.9
rev. 01/07
Case
5 mm plastic lens
Description
Selective photodiode mounted in standard 5 mm
package without standoff. Narrow bandwidth and
high spectral sensitivity in the infrared range
(810…950 nm).
Note: Special packages with standoff available on request
Applications
Alarm systems, light barriers, special sensors,
analytics, optical communication
Miscellaneous Parameters
T_amb = 25°C, unless otherwise specified
Parameter
Active area
Temperature coefficient of I_D
Operating temperature range
Storage temperature range
Soldering Temperature
Acceptance angle at 50% S_λ
Test сonditions
t ≤ 3 s, 3 mm from case
Symbol
A
T_C(I_D)
T_amb
T_stg
T_sld
ϕ
Value
0.62
5
-20 to +85
-30 to +100
260
20
Unit
mm²
%/K
°C
°C
°C
deg.
Optical and Electrical Characteristics
T_amb = 25°C, unless otherwise specified
Parameter
Test conditions Symbol
Min
Breakdown voltage¹⁾
Dark current
Peak sensitivity wavelength
Responsivity at λ_P
Sensitivity range at 10% ¹⁾
Spectral bandwidth at 50%
Shunt resistance
I_R = 10 µA
V_R
5
V_R = 1 V
I_D
V_R = 0 V
λ_p
V_R = 0 V
S_λ
0.3
V_R = 0 V
λ_min, λ_max
800
V_R = 0 V
∆λ_0.5
V_R = 10 mV
R_SH
Noise equivalent power
λ = 880 nm
NEP
Specific detectivity
λ = 880 nm
D*
Junction capacitance
Switching time (R_L = 50 Ω)
1)_{for information only}
V_R = 0 V
C_J
V_R = 1 V
t_r, t_f
Note: All measurements carried out with EPIGAP equipment
Labeling
Type
EPD-880-5-0.9
Lot N°
R_D (typ.) [GΩ]
Typ
Max
Unit
V
1.0
2.5
nA
890
nm
0.55
A/W
960
nm
115
nm
150
3.3x10^-14
2.4x10¹²
GΩ
W/ Hz
cm ⋅ Hz ⋅ W ^−1
120
pF
200
ns
Quantity
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: [phone], Fax : [phone]
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