EPD-880-3-0.9 Datasheet, PDF (1/2 Pages) EPIGAP optoelectronic GmbH – Photodiode

Photodiode
Preliminary
Wavelength
Infrared
Anode
1,8 _-0,6
29 _{- 2,0}
Type
Integrated filter
4,8 _{- 0,4}
3,4 _{- 0,3}
3,7 _{- 0,2}
6,1 _{- 0,4}
0,6 _{- 0,2}
6/21/2007
Technology
AlGaAs/GaAs
EPD-880-3-0.9
rev. 02/07
Case
3 mm plastic lens
Description
Selective photodiode mounted in standard 3 mm
package without standoff. Narrow bandwidth and
high spectral sensitivity in the infrared range
(810…950 nm).
Note: Special packages with standoff available on request
Applications
Alarm systems, light barriers, special sensors,
analytics, optical communication
Miscellaneous Parameters
T_amb = 25°C, unless otherwise specified
Parameter
Test сonditions
Active area
Temperature coefficient of I_D
Operating temperature range
Storage temperature range
Soldering Temperature
Acceptance angle at 50% S_λ
t ≤ 3 s, 3 mm from case
Optical and Electrical Characteristics
T_amb = 25°C, unless otherwise specified
Parameter
Test conditions Symbol
Min
Breakdown voltage¹⁾
Dark current
Peak sensitivity wavelength
Responsivity at λ_P
Sensitivity range at 10% ¹⁾
Spectral bandwidth at 50%
Shunt resistance
Noise equivalent power
I_R = 10 µA
V_R
5
V_R = 1 V
I_D
V_R = 0 V
λ_p
V_R = 0 V
S_λ
0.3
V_R = 0 V
λ_min, λ_max
800
V_R = 0 V
∆λ_0.5
V_R = 10 mV
R_SH
λ = 880 nm
NEP
Specific detectivity
λ = 880 nm
D*
Junction capacitance
V_R = 0 V
C_J
Switching time (R_L = 50 Ω)
V_R = 1 V
t_r, t_f
Photo-current at λ_P = 875 nm
V_R = 0 V
E_e = 1mW/cm²
I_Ph
1)_{for information only}
2) _{Halogen lamp source with appropriate filter}
Note: All measurements carried out with EPIGAP equipment
Labeling
Type
EPD-880-3-0.9
Lot N°
R_D (typ.) [GΩ]
Symbol
A
T_C(I_D)
T_amb
T_stg
T_sld
ϕ
Typ
1.0
890
0.55
115
115
3.3x10^-14
2.4x10¹²
120
200
14
Value
Unit
0.62
mm²
5
%/K
-20 to +85
°C
-30 to +100
°C
260
°C
60
deg.
Max
Unit
V
2.5
nA
nm
A/W
960
nm
nm
GΩ
W/ Hz
cm ⋅ Hz ⋅ W ^−1
pF
ns
µA
Quantity
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: [phone], Fax : [phone]
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