EPD-880-1-0.9-2 Datasheet, PDF (1/2 Pages) EPIGAP optoelectronic GmbH – SMD-Photodiode

SMD-Photodiode
Wavelength
Infrared
Type
SMD
2
0,3
R
3,2
all dimensions: mm
all tolerances: ± 0,1
pad 1,15 x 1,0
cathode
EPD-880-1-0.9-2
28.01.2008
rev. 05
Technology
GaAs
Case
SMD 1206
Description
Selective photodiode with narrow
bandwidth and high spectral sensitivity in
the infrared range (810…950 nm).
Compact design in standard SMD package
allows for easy circuit board mounting and
assembling of arrays.
Applications
Alarm systems, light barriers, special
sensors
Miscellaneous Parameters
T_amb = 25°C, unless otherwise specified
Parameter
Test сonditions
Active area
Temperature coefficient of I_D
Operating temperature range
Storage temperature range
Optical and Electrical Characteristics
T_amb = 25°C, unless otherwise specified
Parameter
Test conditions Symbol
Min
Breakdown voltage¹⁾
Dark current
Peak sensitivity wavelength
Responsivity at λ_P
Sensitivity range at 10% ¹⁾
Spectral bandwidth at 50%
Shunt resistance
Noise equivalent power
Specific detectivity
Junction capacitance
Switching time (R_L = 50 Ω)
1)_{for information only}
Labeling
Type
I_R = 10 µA
V_R
5
V_R = 1 V
I_D
V_R = 0 V
λ_p
V_R = 0 V
S_λ
0.3
V_R = 0 V
λ_min, λ_max
800
V_R = 0 V
∆λ_0.5
V_R = 10 mV
R_SH
λ = 880 nm
NEP
λ = 880 nm
D*
V_R = 0 V
C_J
V_R = 1 V
t_r, t_f
Lot N°
Typ. S_λ [A/W]
EPD-880-1-0.9
*Note: All measurements carried out with EPIGAP equipment
Symbol
A
TCI_D
T_amb
T_stg
Value
0.62
5
-20 to +85
-40 to +125
Unit
mm²
%/K
°C
°C
Typ
1.0
890
0.55
115
205
3.2x10^-14
2.4x10¹²
500
175
Max
Unit
V
2.5
nA
nm
A/W
960
nm
nm
GΩ
W/ Hz
cm ⋅ Hz ⋅ W ^−1
pF
ns
Quantity
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications.All operating parameters must be validated for each customer application by the customer.
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: [phone], Fax : [phone]
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