EPD-740-9-0.4 Datasheet, PDF (1/2 Pages) EPIGAP optoelectronic GmbH – Photodiode

Photodiode
Preliminary
Wavelength
Infrared
Cathode
1
2,8 ± 0,2
2,2 ± 0,1
Type
SMD
1,9 ± 0,2
6/28/2007
Technology
AlGaAs/AlGaAs
EPD-740-9-0.4
rev. 01/07
Case
TOPLED
Description
Selective photodiode mounted in TOPLED^ PLCC-2
package, for easy circuit board mounting and
assembling of arrays. Narrow response range (740
nm peak) by means of integrated filter
Applications
2
Optical communications, safety equipment, light
Anode
barriers
0,15
0,5 ± 0,2
1
ELC-68
Cathode
Miscellaneous Parameters
T_amb = 25°C, unless otherwise specified
Parameter
Active area
Temperature coefficient of I_D
Operating temperature range
Storage temperature range
Soldering Temperature
Acceptance angle at 50% S_λ
Test сonditions
Optical and Electrical Characteristics
T_amb = 25°C, unless otherwise specified
Parameter
Test conditions Symbol
Min
Breakdown voltage¹⁾
I_R = 10 µA
V_R
5
Dark current
Responsivity at 740 nm¹⁾
V_R = 5 V
I_D
V_R = 0 V
S_λ
Spectral range at 10 %
V_R = 0 V
λ_0.5
680
Spectral bandwidth at 50%
V_R = 0 V
∆λ_0.4
Shunt resistance
V_R = 10 mV
R_SH
Noise equivalent power
λ = 740 nm
NEP
Specific detectivity
λ = 740 nm
D*
Junction capacitance
V_R = 0 V
C_J
Switching time
V_R = 5 V
t_r, t_f
Photo-current at λ_P ²⁾
V_R = 0 V
E_e = 1mW/cm²
I_Ph
1)_{for information only}
2) _{Halogen lamp source with appropriate filter}
Note: All measurements carried out with EPIGAP equipment
Labeling
Type
EPD-740-9-0.4
Lot N°
R_D (typ.) [GΩ]
Symbol
A
T_C(I_D)
T_amb
T_stg
T_sld
ϕ
Value
0.09
5
-20 to +85
-40 to +90
240
120
Unit
mm²
%/K
°C
°C
°C
deg.
Typ
Max
Unit
V
40
200
pA
0.5
A/W
770
nm
115
nm
350
GΩ
7.2x10^-15
4.2x10¹²
W/ Hz
cm ⋅ Hz ⋅ W ^−1
40
pF
15/30
ns
760
nA
Quantity
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: [phone], Fax : [phone]
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