EPD-740-5-0.9 Datasheet, PDF (1/2 Pages) EPIGAP optoelectronic GmbH – Photodiode

Photodiode
Preliminary
Wavelength
Infrared
Anode
2 _{- 1,0}
31,8 _{- 1,7}
Type
water clear
9 _{- 0,5}
1,1 _{- 0,1}
6 _{- 0,3}
0,6 _{- 0,2}
6/28/2007
Technology
AlGaAs/GaAs
EPD-740-5-0.9
rev. 02/07
Case
5 mm plastic lens
Description
Selective photodiode mounted in standard 5 mm
package without standoff. Narrow response
range (740 nm peak) by means of integrated filter
Note: Special packages with standoff available on request
Applications
Optical communications, safety equipment, light
barriers
Miscellaneous Parameters
T_amb = 25°C, unless otherwise specified
Parameter
Active area
Temperature coefficient of I_D
Operating temperature range
Storage temperature range
Soldering Temperature
Acceptance angle at 50% S_λ
Test сonditions
t ≤ 3 s, 3 mm from case
Symbol
A
T_C(I_D)
T_amb
T_stg
T_sld
ϕ
Value
0.62
5
-20 to +85
-40 to +125
260
20
Unit
mm²
%/K
°C
°C
°C
deg.
Optical and Electrical Characteristics
T_amb = 25°C, unless otherwise specified
Parameter
Test conditions Symbol
Min
Typ
Breakdown voltage¹⁾
I_R = 10 µA
V_R
Dark current
V_R = 5 V
I_D
Peak sensitivity wavelength
Responsivity at λ_P
Spectral range at 10 %
V_R = 0 V
λ_p
V_R = 0 V
S_λ
V_R = 0 V
λ_0.5
Spectral bandwidth at 50%
V_R = 0 V
∆λ_0.4
Shunt resistance
V_R = 10 mV
R_SH
Noise equivalent power
λ = 740 nm
NEP
Specific detectivity
λ = 740 nm
D*
Junction capacitance
V_R = 0 V
C_J
Switching time (R_L = 50 Ω)
V_R = 5 V
t_r, t_f
Photo-current at λ_P ²⁾
V_R = 0 V
E_e = 1mW/cm²
I_Ph
1)_{for information only}
2) _{Halogen lamp source with appropriate filter}
Note: All measurements carried out with EPIGAP equipment
5
40
740
0.5
680
80
300
7.2x10^-15
1.1x10¹³
120
170
15
Labeling
Type
EPD-740-5-0.9
Lot N°
R_D (typ.) [GΩ]
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: [phone], Fax : [phone]
Max
Unit
V
200
pA
nm
A/W
770
nm
nm
GΩ
W/ Hz
cm ⋅ Hz ⋅ W ^−1
pF
ns
µA
Quantity
1 of 2