EPD-660-5-0.9 Datasheet, PDF (1/2 Pages) EPIGAP optoelectronic GmbH – Photodiode

Photodiode
Preliminary
Wavelength
Red
Type
water clear
Anode
2 - 1,0
9 - 0,5
1,1 - 0,1
31,8 - 1,7
6 - 0,3
0,6 - 0,2
27.04.2007
Technology
AlGaAs/GaAs
EPD-660-5-0.9
rev. 02/06
Case
5 mm plastic lens
Description
Selective photodiode mounted in standard 5 mm
package without standoff . Narrow response
range (660 nm peak) by means of integrated filter
Note: Special packages with standoff available on request
Applications
Optical communications, safety equipment,
automation, analytics
Miscellaneous Parameters
T_amb = 25°C, unless otherwise specified
Parameter
Test сonditions
Active area
Temperature coefficient of I_D
Operating temperature range
Storage temperature range
Soldering Temperature
t ≤ 3 s, 3 mm from case
Acceptance angle at 50% S_λ
Optical and Electrical Characteristics
T_amb = 25°C, unless otherwise specified
Parameter
Test conditions Symbol
Min
Breakdown voltage¹⁾
Dark current
Peak sensitivity wavelength
Responsivity at λ_P
Sensitivity range at 1% ¹⁾
Spectral bandwidth at 50%
Shunt resistance
Noise equivalent power
I_R = 10 µA
V_R
5
V_R = 1 V
I_D
V_R = 0 V
λ_p
V_R = 0 V
S_λ
V_R = 0 V
λ_min, λ_max
605
V_R = 0 V
∆λ_0.5
V_R = 10 mV
R_SH
500
λ = 660 nm
NEP
Specific detectivity
λ = 660 nm
D*
Junction capacitance
V_R = 0 V
C_J
Switching time (R_L = 50 Ω)
V_R = 1 V
t_r, t_f
Photo-current at illuminant A^1,2)
V_R = 0 V
E_v = 1000 lx
I_Ph
1)_{for information only}
2) _{Standard light source with a color temperature of 2856 K}
Note: All measurements carried out with EPIGAP equipment
Labeling
Type
EPD-660-5-0.9
Lot N°
R_D (typ.) [GΩ]
Symbol
A
T_C(I_D)
T_amb
T_stg
T_sld
ϕ
Typ
40
660
0.42
80
600
8.5x10^-15
9.2x10¹²
50
40
1.8
Value
Unit
0.62
mm²
5
%/K
-20 to +85
°C
-30 to +100
°C
260
°C
20
deg.
Max
Unit
V
300
pA
nm
A/W
705
nm
nm
GΩ
W/ Hz
cm ⋅ Hz ⋅ W ^−1
pF
ns
µA
Quantity
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: [phone], Fax : [phone]
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