EPD-660-3-0.5 Datasheet, PDF (1/2 Pages) EPIGAP optoelectronic GmbH – Photodiode

Photodiode
Preliminary
Wavelength
Red
Type
water clear
Ø3,1
4,3
30,0 ^±1,0
1,5
1,0 0,65
4,0
1,0
Anode
6/21/2007
Technology
AlGaAs/GaAs
EPD-660-3-0.5
rev. 03/07
Case
3 mm plastic lens
Description
Selective photodiode mounted in standard 3 mm
package with standoff . Narrow response range
(660 nm peak) by means of integrated filter
Note: Special packages without standoff available on request
Applications
Optical communications, safety equipment,
automation, analytics
Miscellaneous Parameters
T_amb = 25°C, unless otherwise specified
Parameter
Active area
Temperature coefficient of I_D
Operating temperature range
Storage temperature range
Soldering Temperature
Acceptance angle at 50% S_λ
Test сonditions
t ≤ 3 s, 3 mm from case
Symbol
A
T_C(I_D)
T_amb
T_stg
T_sld
ϕ
Value
0.17
4
-20 to +85
-40 to +100
260
60
Unit
mm²
%/K
°C
°C
°C
deg.
Optical and Electrical Characteristics
T_amb = 25°C, unless otherwise specified
Parameter
Test conditions Symbol
Min
Breakdown voltage¹⁾
Dark current
Peak sensitivity wavelength
Responsivity at λ_P
Sensitivity range at 1% ¹⁾
Spectral bandwidth at 50%
Shunt resistance
I_R = 10 µA
V_R
5
V_R = 1 V
I_D
V_R = 0 V
λ_p
V_R = 0 V
S_λ
V_R = 0 V
λ_min, λ_max
605
V_R = 0 V
∆λ_0.5
V_R = 10 mV
R_SH
500
Noise equivalent power
λ = 660 nm
NEP
Specific detectivity
λ = 660 nm
D*
Junction capacitance
V_R = 0 V
C_J
Switching time (R_L = 50 Ω)
V_R = 1 V
t_r, t_f
Photo-current at illuminant A^1,2)
V_R = 0 V
Ev = 1000 lx
I_Ph
1)_{for information only}
2) _{Standard light source with a color temperature of 2856 K}
Note: All measurements carried out with EPIGAP equipment
Labeling
Type
EPD-660-3-0.5
Lot N°
R_D (typ.) [GΩ]
Typ
Max
Unit
V
40
200
pA
660
nm
0.42
A/W
705
nm
80
nm
670
8.5x10^-15
4.8x10¹²
50
GΩ
W/ Hz
cm ⋅ Hz ⋅ W ^−1
pF
15/30
ns
0.33
µA
Quantity
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: [phone], Fax : [phone]
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