EPD-660-1-0.9 Datasheet, PDF (1/2 Pages) EPIGAP optoelectronic GmbH – SMD-Photodiode

SMD-Photodiode
Preliminary
Wavelength
Type
Red
SMD
2
all dimensions: mm
all tolerances: ± 0,1
0,3
R
3,2
pad 1,15 x 1,0
cathode
6/21/2007
Technology
AlGaAs/GaAs
EPD-660-1-0.9
rev. 03/07
Case
SMD 1206
Description
Narrow bandwidth and high spectral
sensitivity in the red visible range
(610…700 nm), compact design in
standard SMD package allows for easy
circuit board mounting and assembling of
arrays
Applications
Light barriers, optical communications,
safety equipment, alarm systems
Miscellaneous Parameters
T_amb = 25°C, unless otherwise specified
Parameter
Active area
Operating temperature range
Storage temperature range
Optical and Electrical Characteristics
T_amb = 25°C, unless otherwise specified
Parameter
Test conditions
Breakdown voltage¹⁾
Dark current (E_e = 0 W/m²)
Responsivity at λ_P
Peak sensitivity
Sensitivity range at 50%
Spectral bandwidth at 50%
Shunt resistance
Noise equivalent power
Specific detectivity
Junction capacitance
Switching time (R_L = 50 Ω)
1)_{for information only}
Labeling
Type
I_R = 10 µA
V_R = 1 V
V_R = 0 V
V_R = 0 V
V_R = 0 V
V_R = 0 V
V_R = 10 mV
λ = 660 nm
λ = 660 nm
V_R = 0 V
V_R = 1 V
Lot N°
EPD-660-1-0.9
Test сonditions
Symbol
Min
V_R
I_D
S_λ
λ_P
λ_min, λ_max
620
∆λ_0.5
R_SH
200
NEP
D*
C_J
t_r, t_f
Typ. S_λ [A/W]
Symbol
A
T_amb
T_stg
Value
0.62
-20 to +85
-40 to +125
Unit
mm²
°C
°C
Typ
10
40
0.42
660
80
400
8.5x10^-15
9.2x10¹²
40
40
Max
Unit
V
300
pA
A/W
nm
700
nm
nm
GΩ
W/ Hz
cm ⋅ Hz ⋅ W ^−1
pF
ns
Quantity
*Note: All measurements carried out with EPIGAP equipment
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: [phone], Fax : [phone]
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