EPD-525-3-0.5 Datasheet, PDF (1/2 Pages) EPIGAP optoelectronic GmbH – Photodiode

Photodiode
Preliminary
Wavelength
Blue-Green
Type
water clear
Ø3,1
4,3
30,0 ^±1,0
1,5
1,0 0,65
4,0
1,0
Anode
27.04.2007
EPD-525-3-0.5
rev. 01/07
Technology
GaP
Case
3 mm plastic lens
Description
Selective photodiode mounted in standard 3 mm
package with standoff. Narrow bandwidth and
high spectral sensitivity in the range of max. eye
responsivity (500…600 nm).
Note: Special packages without standoff available on request
Applications
light barriers, automation, optical analytics
Miscellaneous Parameters
T_amb = 25°C, unless otherwise specified
Parameter
Test сonditions
Active area
Temperature coefficient of I_D
Operating temperature range
Storage temperature range
Soldering Temperature
Acceptance angle at 50% S_λ
t ≤ 3 s, 3 mm from case
Optical and Electrical Characteristics
T_amb = 25°C, unless otherwise specified
Parameter
Test conditions Symbol
Min
Breakdown voltage¹⁾
Dark current
Peak sensitivity wavelength
Responsivity at λ_P
Sensitivity range at 1% ¹⁾
Spectral bandwidth at 50%
Shunt resistance
Noise equivalent power
I_R = 10 µA
V_R
5
V_R = 5 V
I_D
V_R = 0 V
λ_p
V_R = 0 V
S_λ
V_R = 0 V
λ_min, λ_max
500
V_R = 0 V
∆λ_0.5
V_R = 10 mV
R_SH
λ = 525 nm
NEP
Specific detectivity
λ = 525 nm
D*
Junction capacitance
V_R = 0 V
C_J
Switching time (R_L = 50 Ω)
V_R = 1 V
t_r, t_f
Photocurrent at illuminant A^1,2)
V_R = 0 V
Ev = 1000 lx
I_Ph
1)_{for information only}
2) _{Standard light source with a color temperature of 2856 K}
Note: All measurements carried out with EPIGAP equipment
Labeling
Type
Lot N°
R_D (typ.) [GΩ]
EPD-525-3-0.5
Symbol
A
T_C(I_D)
T_amb
T_stg
T_sld
ϕ
Typ
5
525
0.3
70
310
4.3x10^-15
9.6x10¹²
25
30
67
Value
Unit
0.17
mm²
5
%/K
-20 to +85
°C
-40 to +125
°C
260
°C
60
deg.
Max
Unit
V
30
pA
nm
A/W
600
nm
nm
GΩ
W/ Hz
cm ⋅ Hz ⋅ W ^−1
pF
ns
nA
Quantity
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: [phone], Fax : [phone]
1 of 2