EPD-525-0-1.4 Datasheet, PDF (1/2 Pages) EPIGAP optoelectronic GmbH – Photodiode

Photodiode
Wavelength
Green, selective
Cathode
Anode
13,4
+1,6
-1,6
Type
Integrated filter
3,5
+0 , 1
-0 ,1
0,2
+ 0,02 5
-0 , 02 5
Ø 5,33
Ø 4,22
0,23 ^+0,075
TO-18
22.04.2008
Technology
GaP
EPD-525-0-1.4
rev. 01
Case
TO-18
Description
Narrow bandwidth and high spectral
sensitivity in the green visible range
(500…600 nm), mounted in hermetically
sealed T0-18 package.
Applications
Alarm systems, light barriers, special
sensors for automotive industry, for
nearly V_λ matched detectors
Miscellaneous Parameters
T_amb = 25°C, unless otherwise specified
Parameter
Active area
Temperature coefficient of I_D
Operating temperature range
Storage temperature range
Test сonditions
T = -40…120°C
Optical and Electrical Characteristics
T_amb = 25°C, unless otherwise specified
Parameter
Test conditions Symbol
Min
Dark current
V_R = 5 V
I_D
Peak sensitivity wavelength
V_R = 0 V
λ_p
Responsivity at λ_P
Sensitivity range at 1% ¹⁾
V_R = 0 V
S_λ
V_R = 0 V
λ_min, λ_max
410
Spectral bandwidth at 50%
V_R = 0 V
∆λ_0.5
Shunt resistance
V_R = 10 mV
R_SH
Noise equivalent power
λ = 525 nm
NEP
Specific detectivity
λ = 525 nm
D*
Junction capacitance
V_R = 0 V
C_J
Switching time (R_L = 50 Ω)
V_R = 1 V
t_r, t_f
1)_{for information only}
2) _{Standard light source with a color temperature of 2856 K}
Labeling
Type
EPD-525-0-1.4
Lot N°
Typ. S_λ [A/W]
*Note: All measurements carried out with EPIGAP equipment
Symbol
A
TC_ID
T_amb
T_stg
Value
1.79
4.7
-40 to +125
-40 to +125
Unit
mm²
%/K
°C
°C
Typ
5
525
0.08
75
200
10.6x10^-14
1.26x10¹³
180
35
Max
Unit
30
pA
nm
A/W
580
nm
nm
GΩ
W/ Hz
cm ⋅ Hz ⋅ W ^−1
pF
ns
Quantity
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each application by the customers themselves.
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: [phone], Fax : [phone]
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