EPD-470-5-0.5 Datasheet, PDF (1/2 Pages) EPIGAP optoelectronic GmbH – Photodiode

Photodiode
Preliminary
Wavelength
Blue - Green
Type
Integrated filter
Anode
1,5
9,15
1
5,75 _{- 0,3}
36,5 ^{± 1,0}
0,6 _{- 0,2}
Ø5
11.04.2007
Technology
GaP
EPD-470-5-0.5
rev. 04/07
Case
5 mm plastic lens
Description
Selective photodiode chip in standard 5 mm
package. Narrow bandwidth and high spectral
sensitivity in the range of 400 - 560 nm. Housing
without standoff leads.
Note: Special packages with standoff available on request
Applications
Optical communications, safety equipment,
automation, analytics, fluorescence detection
Miscellaneous Parameters
T_amb = 25°C, unless otherwise specified
Parameter
Active area
Temperature coefficient of I_D
Operating temperature range
Storage temperature range
Acceptance angle at 50% S_λ
Test сonditions
Optical and Electrical Characteristics
T_amb = 25°C, unless otherwise specified
Parameter
Test conditions Symbol
Min
Breakdown voltage¹⁾
I_R = 10 µA
V_R
Dark current
V_R = 5 V
I_D
Peak sensitivity wavelength
V_R = 0 V
λ_p
460
Responsivity at 470 nm
V_R = 0 V
S_λ
Sensitivity range at 1% ¹⁾
V_R = 0 V
λ_min, λ_max
385
Spectral bandwidth at 50%
V_R = 0 V
∆λ_0.5
Shunt resistance
V_R = 10 mV
R_SH
70
Noise equivalent power
λ = 470 nm
NEP
Specific detectivity
λ = 470 nm
D*
Junction capacitance
V_R = 0 V
C_J
Switching time (R_L = 50 Ω)
V_R = 5 V
t_r, t_f
Photo current at Illuminant A
V_R = 0 V
E_v = 1000 lx
I_Ph
1)_{for information only}
Note: All measurements carried out with EPIGAP equipment
Labeling
Type
Lot N°
R_D (typ.) [GΩ]
EPD-470-5-0.5
Symbol
A
T_C(I_D)
T_amb
T_stg
ϕ
Value
0.17
5
-40 to +85
-40 to +100
20
Unit
mm²
%/K
°C
°C
deg.
Typ
Max
Unit
10
V
5
30
pA
470
480
nm
0.3
A/W
565
nm
100
nm
100
4.4x10^-15
9.3x10¹²
GΩ
W/ Hz
cm ⋅ Hz ⋅ W ^−1
120
pF
200
ns
0.2
µA
Quantity
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: [phone], Fax : [phone]
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