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EPD-440-0-2.5 Datasheet, PDF (1/2 Pages) EPIGAP optoelectronic GmbH – Photodiode
Photodiode
Preliminary
Wavelength
UV
Type
Schottky Contact
11.04.2007
Technology
GaP
EPD-440-0-2.5
rev. 03/07
Case
TO-39 + UV-glass
Description
Wide bandwidth and high spectral sensitivity in
3,25 ± 0,1
the UV and visible range (190 nm - 570 nm),
± 0,1
Chip Location mounted in hermetically sealed TO-39 package
9,90
with UV-glass window
Anode
13,5 ± 1,0
2,00 ± 0,05
Chip Location
ELC-70
0,80 ± 0,05
45,00°
Applications
Medical engineering (dermatology), output check
of UV - lamps and oil or gas burner flame,
measurement and control of ecological
parameters, radiation control for a solarium, UV
water purification facilities
Miscellaneous Parameters
Tamb = 25°C, unless otherwise specified
Parameter
Test сonditions
Active area
Temperature coefficient of ID
Operating temperature range
Storage temperature range
Acceptance angle at 50% Sλ
Optical and Electrical Characteristics
Tamb = 25°C, unless otherwise specified
Parameter
Test conditions Symbol
Min
Breakdown voltage1)
IR = 10 µA
VR
5
Dark current
VR = 5 V
ID
Peak sensitivity wavelength
VR = 0 V
λp
Responsivity at λP
Sensitivity range at 1%
VR = 0 V
VR = 0 V
Sλ
λmin, λmax
190
Spectral bandwidth at 50%
VR = 0 V
∆λ0.5
Shunt resistance
VR = 10 mV
RSH
80
Noise equivalent power
λ = 440 nm
NEP
Specific detectivity
λ = 440 nm
D*
Junction capacitance
VR = 0 V
CJ
Switching time (RL = 50 Ω)
VR = 5 V
tr, tf
Photo current at λ = 440 nm1,2)
VR = 0 V
Ee = 1 mW/cm²
IPh
1)for information only
2)measured with common halogen lamp source and appropriate filter
Note: All measurements carried out with EPIGAP equipment
Labeling
Type
Lot N°
RD (typ.) [GΩ]
EPD-440-0-2.5
Symbol
A
TC(ID)
Tamb
Tstg
ϕ
Value
4.8
7.0
-40 to +125
-40 to +125
135
Unit
mm²
%/K
°C
°C
deg.
Typ
15
440
0.17
180
100
1.3x10-14
1.7x1013
1000
1/60
6.5
Max
Unit
V
40
pA
nm
A/W
570
nm
nm
GΩ
W/ Hz
cm ⋅ Hz ⋅ W −1
pF
ns
µA
Quantity
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545
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