EPD-365-0-2.5 Datasheet, PDF (1/2 Pages) EPIGAP optoelectronic GmbH – Photodiode

Photodiode
Preliminary
Wavelength
UV
Type
Schottky Contact
11.04.2007
Technology
GaP
EPD-365-0-2.5
rev. 03/07
Case
TO-39 + UG-11 filter
8,33
6,35
Filter
Chip
Description
Wide bandwidth and high spectral sensitivity in the
UV range (245 nm - 400 nm), mounted in
hermetically sealed TO-39 package with UG11 UV
filter-glass window
Applications
Medical engineering (dermatology), output check
of UV - lamps and gas burner flame,
measurement and control of ecological
parameters, radiation control for a solarium, UV
water purification facilities
Miscellaneous Parameters
T_amb = 25°C, unless otherwise specified
Parameter
Test сonditions
Symbol
Value
Unit
Active area
Temperature coefficient of I_D
Operating temperature range
Storage temperature range
Acceptance angle at 50% S_λ
A
T_C(I_D)
T_amb
T_stg
ϕ
4.8
7.0
-40 to +125
-40 to +125
60
mm²
%/K
°C
°C
deg.
Optical and Electrical Characteristics
T_amb = 25°C, unless otherwise specified
Parameter
Test conditions Symbol
Min
Typ
Max
Unit
Breakdown voltage¹⁾
I_R = 10 µA
V_R
5
V
Dark current
V_R = 5 V
I_D
15
40
pA
Peak sensitivity wavelength
V_R = 0 V
λ_p
365
nm
Responsivity at λ_P
V_R = 0 V
S_λ
0.07
A/W
Sensitivity range at 1%
V_R = 0 V
λ_min, λ_max
245
400
nm
Spectral bandwidth at 50%
V_R = 0 V
∆λ_0.5
85
nm
Shunt resistance
V_R = 10 mV
R_SH
80
100
GΩ
Noise equivalent power
λ = 365 nm
NEP
3.2x10^-14
W/ Hz
Specific detectivity
λ = 365 nm
D*
6.9x10¹²
cm ⋅ Hz ⋅ W ^−1
Junction capacitance
V_R = 0 V
C_J
1000
pF
Switching time (R_L = 50 Ω)
V_R = 5 V
t_r, t_f
1/60
ns
Photo current at λ = 365 nm^1,2)
V_R = 0 V
E_e = 1 mW/cm²
I_Ph
1.3
µA
1)_{for information only}
2)_{measured with common halogen lamp source and appropriate filter}
Note: All measurements carried out with EPIGAP equipment
Labeling
Type
EPD-365-0-2.5
Lot N°
R_D (typ.) [GΩ]
Quantity
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: [phone], Fax : [phone]
1 of 2