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EPD-365-0-0.9 Datasheet, PDF (1/2 Pages) EPIGAP optoelectronic GmbH – Photodiode
Photodiode
Preliminary
Wavelength
UV
Type
Schottky Contact
11.04.2007
Technology
GaP
EPD-365-0-0.9
rev. 03/07
Case
TO-46 + UG-11 filter
5,1
+0,1
-0,1
0,2
+0,025
-0,025
Description
Wide bandwidth and high spectral sensitivity in the
UV range (245 nm - 400 nm), mounted in
Ø 5,31
hermetically sealed TO-46 package with UG11 UV
Ø 4,22
filter-glass window
Cathode
Anode
13,4
+1,6
-1,6
0,23 +0,075
TO-46
Chip Location
Applications
Medical engineering (dermatology), output check
of UV - lamps and gas burner flame,
measurement and control of ecological
parameters, radiation control for a solarium, UV
water purification facilities
Miscellaneous Parameters
Tamb = 25°C, unless otherwise specified
Parameter
Test сonditions
Symbol
Value
Unit
Active area
Temperature coefficient of ID
Operating temperature range
Storage temperature range
Acceptance angle at 50% Sλ
Optical and Electrical Characteristics
Tamb = 25°C, unless otherwise specified
Parameter
Test conditions Symbol
Min
Breakdown voltage1)
Dark current
Peak sensitivity wavelength
Responsivity at λP
Sensitivity range at 1%
Spectral bandwidth at 50%
Shunt resistance
IR = 10 µA
VR
5
VR = 5 V
ID
VR = 0 V
λp
VR = 0 V
Sλ
VR = 0 V
λmin, λmax
245
VR = 0 V
∆λ0.5
VR = 10 mV
RSH
100
Noise equivalent power
λ = 365 nm
NEP
Specific detectivity
λ = 365 nm
D*
Junction capacitance
VR = 0 V
CJ
Switching time (RL = 50 Ω)
VR = 5 V
tr, tf
Photo current at λ = 365 nm2)
VR = 0 V
Ee = 1 mW/cm²
IPh
1)for information only
2)measured with common halogen lamp source and appropriate filter
Note: All measurements carried out with EPIGAP equipment
Labeling
Type
Lot N°
RD (typ.) [GΩ]
EPD-365-0-0.9
A
TC(ID)
Tamb
Tstg
ϕ
0.51
7.0
-40 to +125
-40 to +125
50
mm²
%/K
°C
°C
deg.
Typ
Max
Unit
V
5
20
pA
365
nm
0.07
A/W
400
nm
85
nm
125
GΩ
1.9x10-14
3.8x1012
W/ Hz
cm ⋅ Hz ⋅ W −1
120
pF
1/10
ns
0.13
µA
Quantity
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545
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