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EPD-280-0-0.3-5 Datasheet, PDF (1/2 Pages) EPIGAP optoelectronic GmbH – Photodiode
Photodiode
Preliminary
Wavelength
UV-A – UV-C
Type
UV-lens
EPD-280-0-0.3-5
11.04.2007
rev. 01/07
Technology
Case
SiC
TO-39 + lens
8,60
Anode
13,5 ± 1,0
6,10
+ 0,01
- 0,11
2,10 ± 0,30
Description
Highly reliable photodiode with high spectral
sensitivity in the UV range (220 nm - 380 nm),
mounted in hermetically sealed TO-39 package
Chip Location
± 0,1
9,90
with lens, especially useful for detection of
minimal radiation power
Applications
0,80 ± 0,05
45,00°
Environmental technology, analytical techniques,
medical applications, industrial sensors,
inspecting and controlling of UV radiation as well
as for more general purposes
Miscellaneous Parameters
Tamb = 25°C, unless otherwise specified
Parameter
Active area / Effective active area
Temperature coefficient of IPh
Operating temperature range
Storage temperature range
Acceptance angle at 50% Sλ
Test сonditions
Symbol
Value
A / Aeff
TC(IPh)
Tamb
Tstg
ϕ
0.056/0.72
0.1
-40 to +70
-40 to +100
70
Unit
mm²
%/K
°C
°C
deg.
Optical and Electrical Characteristics
Tamb = 25°C, unless otherwise specified
Parameter
Test conditions Symbol
Min
Breakdown voltage1)
IR = 100 µA
VR
Dark current
VR = 1 V
ID
Peak sensitivity wavelength
VR = 0 V
λp
Responsivity at λP
Sensitivity range at 1%
Spectral bandwidth at 50%
VR = 0 V
VR = 0 V
VR = 0 V
Sλ
λmin, λmax
∆λ0.5
220
Shunt resistance
VR = 10 mV
RSH
Noise equivalent power
λ = 280 nm
NEP
Specific detectivity
λ = 280 nm
D*
Junction capacitance
VR = 0 V
CJ
Photo current at λ = 254 nm1,2)
VR = 0 V
Ee = 100 µW/cm²
IPh
1)for information only
2)measured with Hg-LP UV-emitter as radiation source
Note: All measurements carried out with EPIGAP equipment
Labeling
Type
EPD-280-0-0.3-5
Lot N°
RD (typ.) [TΩ]
Typ
20
10
280
0.13
80
1
1.1x10-15
7.9x1013
20
45
Max
Unit
V
100
fA
nm
A/W
380
nm
nm
TΩ
W/ Hz
cm ⋅ Hz ⋅ W −1
pF
nA
Quantity
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545
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