EPD-280-0-0.3-2 Datasheet, PDF (1/2 Pages) EPIGAP optoelectronic GmbH – Photodiode

Photodiode
Preliminary
Wavelength
UV-A – UV-C
Type
clear UV-glass
EPD-280-0-0.3-2
31.05.2007
rev. 03/07
Technology
Case
SiC
TO-39
4,1 ^{± 0,1}
± ^0,1
9,90
Anode
13,5 ^{± 1,0}
Chip Location
0,80 _{± 0,05}
45,00°
Chip Location
Description
Highly reliable photodiode with high spectral
sensitivity in the UV range (220 nm - 380 nm),
mounted in hermetically sealed TO-39 package
with clear UV-glass window
Note: housing with diffuse glass window available on request
Applications
Environmental technology, analytical techniques,
medical applications, industrial sensors,
inspecting and controlling of UV radiation as well
as for more general purposes
Miscellaneous Parameters
T_amb = 25°C, unless otherwise specified
Parameter
Active area
Temperature coefficient of I_Ph
Operating temperature range
Storage temperature range
Acceptance angle at 50% S_λ
Test сonditions
Symbol
Value
A
T_C(I_Ph)
T_amb
T_stg
ϕ
0.056
0.1
-40 to +70
-40 to +100
70
Unit
mm²
%/K
°C
°C
deg.
Optical and Electrical Characteristics
T_amb = 25°C, unless otherwise specified
Parameter
Test conditions Symbol
Min
Breakdown voltage¹⁾
I_R = 100 µA
V_R
Dark current
V_R = 1 V
I_D
Peak sensitivity wavelength
V_R = 0 V
λ_p
Responsivity at λ_P
Sensitivity range at 1%
Spectral bandwidth at 50%
V_R = 0 V
V_R = 0 V
V_R = 0 V
S_λ
λ_min, λ_max
∆λ_0.5
220
Shunt resistance
V_R = 10 mV
R_SH
Noise equivalent power
λ = 280 nm
NEP
Specific detectivity
λ = 280 nm
D*
Junction capacitance
V_R = 0 V
C_J
Photo currentat λ = 254 nm^1,2)
V_R = 0 V
E_e = 100 µW/cm²
I_Ph
1)_{for information only}
2)_{measured with Hg-LP UV-emitter as radiation source}
Note: All measurements carried out with EPIGAP equipment
Labeling
Type
Lot N°
R_D (typ.) [TΩ]
EPD-280-0-0.3-2
Typ
20
10
280
0.13
80
1
1.1x10^-15
2.2x10¹³
20
3.5
Max
Unit
V
100
fA
nm
A/W
380
nm
nm
TΩ
W/ Hz
cm ⋅ Hz ⋅ W ^−1
pF
nA
Quantity
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: [phone], Fax : [phone]
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