EPD-280-0-0.3-1 Datasheet, PDF (1/2 Pages) EPIGAP optoelectronic GmbH – Photodiode

Photodiode
Preliminary
Wavelength
UV-A – UV-C
Type
clear UV-glass
EPD-280-0-0.3-1
11.04.2007
rev. 02/07
Technology
Case
SiC
TO-46
5,1
+0,1
-0,1
0,2
+0,025
-0,025
Cathode
Anode
13,4
+1,6
-1,6
0,23 ^+0,075
Description
Highly reliable photodiode with high spectral
sensitivity in the UV range (220 nm - 380 nm),
Ø 5,31
Ø 4,22
mounted in hermetically sealed TO-46 package
with clear UV-glass window
Note: housing with diffuse glass window available on request
Applications
Chip Location
Environmental technology, analytical techniques,
TO-46
medical applications, industrial sensors,
inspecting and controlling of UV radiation as well
as for more general purposes
Miscellaneous Parameters
T_amb = 25°C, unless otherwise specified
Parameter
Active area
Temperature coefficient of I_Ph
Operating temperature range
Storage temperature range
Acceptance angle at 50% S_λ
Test сonditions
Symbol
Value
A
T_C(I_Ph)
T_amb
T_stg
ϕ
0.056
0.1
-40 to +70
-40 to +100
50
Unit
mm²
%/K
°C
°C
deg.
Optical and Electrical Characteristics
T_amb = 25°C, unless otherwise specified
Parameter
Test conditions Symbol
Min
Breakdown voltage¹⁾
I_R = 100 µA
V_R
Dark current
V_R = 1 V
I_D
Peak sensitivity wavelength
V_R = 0 V
λ_p
Responsivity at λ_P
Sensitivity range at 1%
Spectral bandwidth at 50%
V_R = 0 V
V_R = 0 V
V_R = 0 V
S_λ
λ_min, λ_max
∆λ_0.5
220
Shunt resistance
V_R = 10 mV
R_SH
Noise equivalent power
λ = 280 nm
NEP
Specific detectivity
λ = 280 nm
D*
Junction capacitance
V_R = 0 V
C_J
Photo current at λ = 254 nm^1,2)
V_R = 0 V
E_e = 100 µW/cm²
I_Ph
1)_{for information only}
2)_{measured with Hg-LP UV-emitter as radiation source}
Note: All measurements carried out with EPIGAP equipment
Labeling
Type
EPD-280-0-0.3-1
Lot N°
R_D (typ.) [TΩ]
Typ
20
5
280
0.13
80
2
7.6x10^-16
3.1x10¹³
20
3.5
Max
Unit
V
100
fA
nm
A/W
380
nm
nm
TΩ
W/ Hz
cm ⋅ Hz ⋅ W ^−1
pF
nA
Quantity
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: [phone], Fax : [phone]
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