EPD-150-0-2.5 Datasheet, PDF (1/2 Pages) EPIGAP optoelectronic GmbH – Photodiode

Photodiode
Preliminary
Wavelength
VUV
Type
Schottky Contact
EPD-150-0-2.5
6/21/2007
rev. 05/07
Technology
Case
GaP
TO-39 + sapphire window
chip location
± ^0,1
9,90
Anode
13,5 ^{± 1,0}
2,00 ^{± 0,05}
sapphire
ELC-80
0,80 _{± 0,05}
45,00°
chip location
Description
Wide bandwidth and high sensitivity from VUV up
to the visible spectrum (150 nm - 550 nm),
mounted in hermetically sealed TO-39 package
with sapphire window
Applications
Medical engineering (dermatology), output check
of UV - lamps and oil or gas burner flame,
measurement and control of ecological
parameters, radiation control for a solarium, UV
water purification facilities
Miscellaneous Parameters
T_amb = 25°C, unless otherwise specified
Parameter
Active area
Temperature coefficient of I_D
Operating temperature range
Storage temperature range
Acceptance angle at 50% S_λ
Test сonditions
Symbol
A
T_C(I_D)
T_amb
T_stg
ϕ
Value
4.8
7.0
-40 to +125
-40 to +125
120
Unit
mm²
%/K
°C
°C
deg.
Optical and Electrical Characteristics
T_amb = 25°C, unless otherwise specified
Parameter
Test conditions Symbol
Min
Typ
Breakdown voltage¹⁾
I_R = 10 µA
V_R
5
Dark current
V_R = 5 V
I_D
15
Peak sensitivity wavelength
V_R = 0 V
λ_p
440
Responsivity at λ_P
Sensitivity range at 1%
Spectral bandwidth at 50%
Shunt resistance
Noise equivalent power
Specific detectivity
V_R = 0 V
S_λ
0.17
V_R = 0 V
λ_min, λ_max
150
V_R = 0 V
∆λ_0.5
180
V_R = 10 mV
R_SH
80
100
λ = 440 nm
NEP
1.3x10^-14
λ = 440 nm
D*
1.7x10¹³
Junction capacitance
V_R = 0 V
C_J
1000
Switching time (R_L = 50 Ω)
V_R = 5 V
t_r, t_f
1/60
Photo current at λ = 254 nm^1,2)
V_R = 0 V
E_e = 1 mW/cm²
I_Ph
2.5
1)_{for information only}
2)_{measured with Hg-LP-VUV/UV-emitter as radiation source}
Note: All measurements carried out with EPIGAP equipment
Labeling
Type
Lot N°
R_D (typ.) [GΩ]
EPD-150-0-2.5 ^{EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201}
Tel.: [phone], Fax : [phone]
Max
Unit
V
40
pA
nm
A/W
550
nm
nm
GΩ
W/ Hz
cm ⋅ Hz ⋅ W ^−1
pF
ns
µA
Quantity
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