EPD-1300-5-0.2 Datasheet, PDF (1/2 Pages) EPIGAP optoelectronic GmbH – Photodiode

Photodiode
Preliminary
Wavelength
Infrared
Type
Planar
EPD-1300-5-0.2
6/21/2007
rev. 06/07
Technology
Case
InGaAs/InP
5 mm plastic lens
Anode
1,5
9,15
1
36,5 ^{± 1,0}
5,75 _{- 0,3}
Description
InGaAs-Photodiode mounted in standard 5 mm
package without standoff . High spectral
sensitivity in the infrared range (NIR, SWIR).
0,6 _{- 0,2}
Ø5
Note: Special packages with standoff available on request
Applications
Optical communications,
safety equipment, light barriers
Miscellaneous Parameters
T_amb = 25°C, unless otherwise specified
Parameter
Active area
Temperature coefficient
Operating temperature range
Storage temperature range
Test сonditions
Symbol
A
T_C(I_D)
T_amb
T_stg
Value
0.032
7.4
-40 to +85
-40 to +100
Unit
mm²
%/K
°C
°C
Optical and Electrical Characteristics
T_amb = 25°C, unless otherwise specified
Parameter
Test conditions Symbol
Min
Forward voltage
Breakdown voltage²⁾
I_F = 10 mA
V_F
I_R = 10 µA
V_R
5
Sensitivity range at 10 %
V_R = 0 V
λ
800
Spectral bandwidth at 50 %
Responsivity at 1300 nm¹⁾
V_R = 0 V
V_R = 0 V
∆λ_0,5
S_λ
Dark current
V_R = 5 V
I_D
Shunt resistance
V_R = 10 mV
R_SH
3
Noise equivalent power
λ =1300 nm
NEP
Specific detectivity
λ = 1300 nm
D*
Junction capacitance
V_R = 0 V
C_J
Photo current at 1300 nm*
V_R = 0 V
E_e = 1mW/cm²
I_Ph
1) _{measured on bare chip}
2) _{for information only}
Note: All measurements carried out with EPIGAP equipment
Labeling
Type
Lot N°
RD (typ.) [GΩ]
EPD-1300-5-0.2
Typ
1.7
680
0.9
30
5
4.0x10^-15
4.5x10¹²
11
0.95
Max
1750
200
Unit
V
V
nm
nm
A/W
pA
GΩ
W/ Hz
cm ⋅ Hz ⋅ W ^−1
pF
µA
Quantity
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: [phone], Fax : [phone]
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