EPD-1300-0-3.0 Datasheet, PDF (1/2 Pages) EPIGAP optoelectronic GmbH – Photodiode

Photodiode
Preliminary
Wavelength
Infrared
Type
Planar
3,25 ^{± 0,1}
± ^0,1
9,90
Anode
13,5 ^{± 1,0}
2,00 ^{± 0,05}
Chip Location
ELC-70
0,80 _{± 0,05}
45,00°
EPD-1300-0-3.0
6/21/2007
rev. 04/07
Technology
InGaAs/InP
Case
TO-39
Chip Location
Description
InGaAs-Photodiode mounted in TO-39
standard package . High spectral
sensitivity in the infrared range (NIR ,
SWIR) due to large active area.
Applications
Optical communications,
safety equipment, light barriers
Miscellaneous Parameters
T_amb = 25°C, unless otherwise specified
Parameter
Active area
Temperature coefficient
Operating temperature range
Storage temperature range
Test сonditions
Symbol
A
T_C(I_D)
T_amb
T_stg
Value
7.0
7.4
-40 to +85
-40 to +100
Unit
mm²
%/K
°C
°C
Optical and Electrical Characteristics
T_amb = 25°C, unless otherwise specified
Parameter
Test conditions Symbol
Min
Typ
Forward voltage
Breakdown voltage²⁾
I_F = 10 mA
V_F
0.6
I_R = 10 µA
V_R
5
Sensitivity range at 10 %
V_R = 0 V
λ
800
Spectral bandwidth at 50 %
V_R = 0 V
∆λ_0,5
680
Responsivity at 1300 nm¹⁾
V_R = 0 V
S_λ
0.9
Dark current
V_R = 5 V
I_D
5
Shunt resistance
Noise equivalent power
Specific detectivity
V_R = 10 mV
λ = 1300 nm
λ = 1300 nm
R_SH
NEP
D*
15
30
5.2x10^-14
5.1x10¹²
Junction capacitance
V_R = 0 V
C_J
Photo current at 1300 nm²⁾
V_R = 0 V
E_e = 1mW/cm²
I_Ph
1)_{measured on bare chip}
2)_{for information only}
1000
15
Note: All measurements carried out with EPIGAP equipment
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: [phone], Fax : [phone]
Max
1750
30
1300
Unit
V
V
nm
nm
A/W
nA
MΩ
W/ Hz
cm ⋅ Hz ⋅ W ^−1
pF
µA
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