EPD-1300-0-0.5 Datasheet, PDF (1/2 Pages) EPIGAP optoelectronic GmbH – Photodiode

Photodiode
Preliminary
Wavelength
Infrared
Type
Planar
Au-plating epoxy-lens
EPD-1300-0-0.5
6/21/2007
rev. 03/07
Technology
InGaAs/InP
Case
TO-18
Ø 5,40 ± 0,1
Description
InGaAs-Photodiode mounted in TO-18
standard package covered with epoxy.
High spectral sensitivity in the infrared
range (NIR, SWIR).
Cathode
Anode
13,5 ± 1,0
0,2
2,0 ± 0,2
2,8 ± 0,4
TO-18+epoxy
Applications
1,0 ^{Optical communications,}
safety equipment, light barriers
Miscellaneous Parameters
T_amb = 25°C, unless otherwise specified
Parameter
Active area
Temperature coefficient
Operating temperature range
Storage temperature range
Test сonditions
Optical and Electrical Characteristics
T_amb = 25°C, unless otherwise specified
Parameter
Test
conditions
Symbol
Min
Forward voltage
I_F = 10 mA
V_F
Breakdown voltage²⁾
I_R = 10 µA
V_R
5
Sensitivity range at 10 %
V_R = 0 V
λ
800
Spectral bandwidth at 50 %
Responsivity at 1300 nm¹⁾
V_R = 0 V
V_R = 0 V
∆λ_0,5
S_λ
Dark current
V_R = 5 V
I_D
Shunt resistance
V_R = 10 mV
R_SH
0.5
Noise equivalent power
λ = 1300 nm NEP
Specific detectivity
λ = 1300 nm
D*
Junction capacitance
V_R = 0 V
C_J
1)_{measured on bare chip on TO-18 header}
2)_{for information only}
Symbol
A
T_C(I_D)
T_amb
T_stg
Value
0.196
0.074
-40 to +85
-40 to +100
Unit
mm²
1/K
°C
°C
Typ
0.8
680
0.9
250
1.0
1.1x10^-14
4.0x10¹²
45
Max
1750
1000
Unit
V
V
nm
nm
A/W
pA
GΩ
W/ Hz
cm ⋅ Hz ⋅ W ^−1
pF
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: [phone], Fax : [phone]
1 of 2