EPC-880-1.4 Datasheet, PDF (1/2 Pages) EPIGAP optoelectronic GmbH – Photodiode-Chip

Photodiode-Chip
Preliminary
Wavelength range
Infrared, selective
Type
Integrated filter
11.04.2007
Technology
AlGaAs/GaAs
EPC-880-1.4
rev. 03/07
Electrodes
P (anode) up
1360
1000
960
PD-13
Ø100
Miscellaneous Parameters
T_amb = 25°C, unless otherwise specified
Parameter
Active area
Operating temperature range
Storage temperature range
typ. dimensions (µm)
typ. thickness
300 µm
anode
gold alloy, 1.5 µm
cathode
gold alloy, 0.5 µm
Description
Infrared-selective photo-
diode with narrow
response range
(810 - 950 nm)
Applications
Optical communications,
safety equipment, light
barriers
Test сonditions
Symbol
A
T_amb
T_stg
Value
1.79
-40 to +125
-40 to +125
Unit
mm²
°C
°C
Optical and Electrical Characteristics
T_amb = 25°C, unless otherwise specified
Parameter
Test
conditions
Symbol
Min
Typ
Max
Unit
Dark current
V_R = 1 V
I_D
1.0
2.5
nA
Peak sensitivity
V_R = 0 V
λ_P
890
nm
Spectral range at 50 %
V_R = 0 V
λ_0.5
820
935
nm
Spectral bandwidth at 50%
V_R = 0 V
∆λ_0.5
115
nm
Responsivity at λ_P1
V_R = 0 V
S_λ
0.27
A/W
Switching time
V_R = 1 V
t_r, t_f
200
ns
1_{Measured on bare chip on TO-18 header}
Labeling
Type
Typ. I_D [pA] Typ. S_λ[A/W]
EPС-880-1.4
Packing: Chips on adhesive film with wire-bond side on top
*Note: All measurements carried out with EPIGAP equipment
Lot N°
Quantity
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: [phone], Fax : [phone]
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