EPC-880-0.9-1 Datasheet, PDF (1/2 Pages) EPIGAP optoelectronic GmbH – Photodiode-Chip

Photodiode-Chip
Preliminary
Wavelength range
Infrared, selective
Type
Integrated filter
860
23.05.2007
Technology
GaAs
EPC-880-0.9-1
rev. 01/07
Electrodes
P (anode) up
typ. dimensions (µm)
Ø120
PD-08
Miscellaneous Parameters
T_amb = 25°C, unless otherwise specified
Parameter
Active area
Operating temperature range
Storage temperature range
typ. thickness
300 µm
anode
gold alloy, 1.5 µm
cathode
gold alloy, 0.5 µm
Description
Infrared-selective photo-
diode with narrow
response range
(810 - 950 nm)
Applications
Optical communications,
safety equipment, light
barriers
Test сonditions
Symbol
A
T_amb
T_stg
Value
0.72
-40 to +125
-40 to +125
Unit
mm²
°C
°C
Optical and Electrical Characteristics
T_amb = 25°C, unless otherwise specified
Parameter
Test
conditions
Symbol
Min
Typ
Max
Unit
Reverse voltage³
I_R = 10 µA
V_R
5
V
Dark current
V_R = 1 V
I_D
1.0
2.5
nA
Peak sensitivity
V_R = 0 V
λ_P
890
nm
Spectral range at 50 %
V_R = 0 V
λ_0.5
820
935
nm
Responsivity at λ_P1
V_R = 0 V
S_λ
0.15
0.25
A/W
Responsivity at λ_P2
V_R = 0 V
S_λ
0.55
A/W
Spectral bandwidth at 50%
V_R = 0 V
∆λ_0,5
115
nm
1_{Measured on bare covered chip on TO-18 header}
2_{Measured on epoxy covered chip on TO-18 header}
3_{information only}
Labeling
Type
EPС-880-0.9-1
Typ. I_D [pA] Typ. S_λ[A/W]
Packing: Chips on adhesive film with wire-bond side on top
*Note: All measurements carried out with EPIGAP equipment
Lot N°
Quantity
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: [phone], Fax : [phone]
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