EPC-740-0.5 Datasheet, PDF (1/2 Pages) EPIGAP optoelectronic GmbH – Photodiode-Chip

Photodiode-Chip
Preliminary
Wavelength range
Infrared, selective
Type
Integrated filter
6/28/2007
Technology
AlGaAs/GaAs
EPC-740-0.5
rev. 04/07
Electrodes
P (anode) up
460
typ. dimensions (µm)
360
300
typ. thickness
300 (±20) µm
anode
gold alloy, 1.5 µm
Description
Infrared-selective
photodiode with narrow
response range
(680-770 nm)
cathode
gold alloy, 0.5 µm
Applications
Optical communications,
safety equipment, light
barriers
PD-02
Miscellaneous Parameters
T_amb = 25°C, unless otherwise specified
Parameter
Active area
Operating temperature range
Storage temperature range
Test сonditions
Symbol
A
T_amb
T_stg
Value
0.17
-40 to +125
-40 to +125
Unit
mm²
°C
°C
Optical and Electrical Characteristics
T_amb = 25°C, unless otherwise specified
Parameter
Test
conditions
Symbol
Min
Typ
Max
Unit
Reverse voltage²
I_R = 10 µA
V_R
5
V
Dark current
V_R = 5 V
I_D
40
200
pA
Responsivity at λ_P1
V_R = 0 V
S_λ
0.5
A/W
Peak sensitivity
V_R = 0 V
λ_P
740
nm
Spectral range at 10 %
V_R = 0 V
λ_0.5
680
770
nm
Spectral bandwidth at 50%
V_R = 0 V
∆λ_0.4
80
nm
Junction capacitance
V_R = 0 V
C_J
40
pF
Switching time
V_R = 5 V
t_r, t_f
15/30
ns
1_{Measured on bare chip on TO-18 header}
2_{information only}
Labeling
Type
Typ. I_D [pA] Typ. S_λ[A/W]
EPС-740-0.5
Packing: Chips on adhesive film with wire-bond side on top
Lot N°
Quantity
*Note: All measurements carried out with EPIGAP equipment
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: [phone], Fax : [phone]
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