EPC-660-0.9-1 Datasheet, PDF (1/2 Pages) EPIGAP optoelectronic GmbH – Photodiode-Chip

Photodiode-Chip
Preliminary
Wavelength range
Red, selective
860
Type
Integrated filter
11.04.2007
Technology
AlGaAs/GaAs
EPC-660-0.9-1
rev. 13/07
Electrodes
P (anode) up
typ. dimensions (µm)
Ø120
PD-08
Miscellaneous Parameters
T_amb = 25°C, unless otherwise specified
Parameter
Active area
Operating temperature range
Storage temperature range
typ. thickness
260 µm
anode
gold alloy, 1.5 µm
Description
red-selective photodiode
with narrow response
range (660 nm peak)
cathode
gold alloy, 0.5 µm
Applications
Optical communications,
safety equipment, light
barriers
Test сonditions
Symbol
A
T_amb
T_stg
Value
0.73
-40 to +125
-40 to +125
Unit
mm²
°C
°C
Optical and Electrical Characteristics
T_amb = 25°C, unless otherwise specified
Parameter
Test
conditions
Peak sensitivity
V_R = 0 V
Symbol
λ_P
Spectral range at 50 %
V_R = 0 V
λ_0.5
Responsivity at λ_P1
V_R = 0 V
S_λ
Responsivity at λ_P2
V_R = 0 V
S_λ
Spectral bandwidth at 50%
V_R = 0 V
∆λ_0,5
Dark current
V_R = 1 V
I_D
Junction capacitance
V_R = 0 V
C_J
Switching time
V_R = 1 V
t_r, t_f
1_{Measured on bare covered chip on TO-18 header}
2_{Measured on epoxy covered chip on TO-18 header}
Min
610
0,25
Typ
660
0.3
0.45
90
40
160
200
Labeling
Type
EPС-660-0.9-1
Typ. I_D [pA] Typ. S_λ[A/W]
Lot N°
Packing: Chips on adhesive film with wire-bond side on top
*Note: All measurements carried out with EPIGAP equipment
Max
Unit
nm
700
nm
A/W
A/W
nm
300
pA
pF
ns
Quantity
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: [phone], Fax : [phone]
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